Previous Article Next Article Table of Contents Advanced Materials, Vol.26, No.42, 7241-7246, 2014 DOI10.1002/adma.201402363 Export Citation The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics Kim J, Jang J, Kim K, Kim H, Kim SH, Park CE Keywords:organic field-effect transistors;gate-bias stabilities;fluorinated polymers Please enable JavaScript to view the comments powered by Disqus.
