MOVPE법으로 GaN위에 성장시킨 A1 1-x In x N 박막의 광학적 특성

신동원; 김성익; Yoshida; 허증수; D.W. Shin; S.I. Kim; A. Yoshida; J.S. Huh

Korean Journal of Materials Research, Vol.12, No.2, 112-116, February, 2002

DOI10.3740/MRSK.2002.12.2.112 Export Citation

MOVPE법으로 GaN위에 성장시킨 A1 1-x In x N 박막의 광학적 특성

Optical Properties of A1 1-x In x N Thin film on GaN Grown by MOVPE

신동원, 김성익, Yoshida¹, 허증수 ^†

경북대학교 금속공학과
¹도요하시 기술대학교 전자공학과

D.W. Shin, S.I. Kim, A. Yoshida¹, and J.S. Huh^†

Departments of Metallurgical Engineering, Kyungpook National University, Taegu, Korea
¹Department of Electrical and Electronic Engineering, Toyohashi of Technology Toyohashi, Japan

E-mail:

e studied optical properties of Al 1?x In x N films. Films were grown on GaN by metalorganic vapor-phase epitaxy. The AlInN layer was grown on GaN layer with an α -Al 2 O 3 substrate. X-ray diffraction, optical absorption spectroscopy, photoluminescence(PL) and reflection high energy electron diffraction(RHEED) measurements of AlInN showed that the crystalline quality of Al 1?x In x N layer was improved around x=0.17, at which the lattice constant was matched to the GaN and the band gap of AlInN is larger than that of GaN.

Keywords:MOVPE;AlInN;GaN

[References]

Sato M, J. Appl. Phys., 78(3), 2123 (1995)
Mohammad SN, Morkoc H, J. Appl. Phys., 78(6), 4200 (1995)
Guo Q, Ogawa H, Yoshida A, J. Cryst. Growth, 146, 462 (1995)
Kim KS, Saxler A, Kung P, Raseghi M, Appl. Phys. Lett., 71(6), 800 (1997)
Kubota K, Kobayashi Y, Fujimoto K, Appl. Phys. Lett., 66(7), 2984 (1989)
Kosaki M, Mochisuki S, Nakamura T, Yukawa Y, Nitta S, Yamaguchi S, Amano H, Akasaki I, Jpn. J. Appl. Phys., 40, L420 (2001)
Yamaguchi S, Kariya M, Nitta S, Takeuchi T, Wetzel C, Amano H, Akasaki I, J. Cryst. Growth, 195, 309 (1998)

[Related Articles]

[1] Sato M, J. Appl. Phys., 78(3), 2123 (1995)

[2] Mohammad SN, Morkoc H, J. Appl. Phys., 78(6), 4200 (1995)

[3] Guo Q, Ogawa H, Yoshida A, J. Cryst. Growth, 146, 462 (1995)

[4] Kim KS, Saxler A, Kung P, Raseghi M, Appl. Phys. Lett., 71(6), 800 (1997)

[5] Kubota K, Kobayashi Y, Fujimoto K, Appl. Phys. Lett., 66(7), 2984 (1989)

[6] Kosaki M, Mochisuki S, Nakamura T, Yukawa Y, Nitta S, Yamaguchi S, Amano H, Akasaki I, Jpn. J. Appl. Phys., 40, L420 (2001)

[7] Yamaguchi S, Kariya M, Nitta S, Takeuchi T, Wetzel C, Amano H, Akasaki I, J. Cryst. Growth, 195, 309 (1998)