전기로를 이용한 Si || SiO 2 /Si 3 N 4 || Si 이종기판쌍의 직접접합

이상현; 이상돈; 서태윤; 송오성; Sang Hyun Lee; Sang Don Yi; Tae Yune Seo; Oh Sung Song

Korean Journal of Materials Research, Vol.12, No.2, 117-120, February, 2002

DOI10.3740/MRSK.2002.12.2.117 Export Citation

전기로를 이용한 Si || SiO 2 /Si 3 N 4 || Si 이종기판쌍의 직접접합

Direct Bonding of Si || SiO 2 /Si 3 N 4 || Si Wafer Pairs With a Furnace

이상현^†, 이상돈, 서태윤, 송오성

서울시립대학교 재료공학과

Sang Hyun Lee^†, Sang Don Yi, Tae Yune Seo, and Oh Sung Song

Dept.of Materials Sciences & Engineering, The University of Seoul, Korea

E-mail:

We investigated the possibility of direct bonding of the Si ∥SiO 2 /Si 3 N 4 ∥Si wafers for Oxide-Nitride-Oxide(ONO) gate oxide applications. 10cm-diameter 2000 \AA -thick thermal oxide/Si(100) and 500 \AA -Si 3 N 4 LPCVD/Si (100) wafers were prepared, and wet cleaned to activate the surface as hydrophilic and hydrophobic states, respectively. Cleaned wafers were premated wish facing the mirror planes by a specially designed aligner in class-100 clean room immediately. Premated wafer pairs were annealed by an electric furnace at the temperatures of 400, 600, 800, 1000, and 120 0 ? C for 2hours, respectively. Direct bonded wafer pairs were characterized the bond area with a infrared(IR) analyzer, and measured the bonding interface energy by a razor blade crack opening method. We confirmed that the bond interface energy became 2,344mJ/ \m 2 when annealing temperature reached 100 0 ? C , which were comparable with the interface energy of homeogenous wafer pairs of Si/Si.

Keywords:직접접합;Si∥SiO 2 /Si 3 N 4 ∥Si 기판쌍;전기로

[References]

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Tong QY, Goesele U, Semiconductor Wafer Bonding : Science and Technology, New York, John Wiley & Sons, (1999) (1999)
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Lee JW, PhD. thesis (Seoul National University (1999)) (1999)
Haisma J, Michielsen TM, Spierings GACM, Jpn. J. Appl. Phys., 28(5), L725 (1989)

[Related Articles]

[1] Shimbo M, Furukawa K, Fukuda K, Tanzawa K, J. Appl. Phys., 60(8), 2987 (1986)

[2] Lasky JB, Appl. Phys. Lett., 48, 78 (1986)

[3] Tong QY, Goesele U, Semiconductor Wafer Bonding : Science and Technology, New York, John Wiley & Sons, (1999) (1999)

[4] Lehmann V, Mitani K, Stengl R, Mii T, Goesele U, Jpn. J. Appl. Phys., 28, L2141 (1989)

[5] Bruel M, Aspar B, Auberton-Herve AJ, Jpn. J. Appl. Phys., 36, 1636 (1997)

[6] Robertson J, Powell MJ, Apply. Phys. Lett., 44, 415 (1984)

[7] Santucci S, Lozzi L, Passacantando M, Phani AR, Palumbo E, Bracchitta G, De Tommasis R, Torsi A, Alfonsetti R, Moccia G, J. Non-Cryst. Solids, 245, 224 (1999)

[8] Tanaka H, Uchida H, Ajioka T, Hirashita N, IEEE Trans. Elec. Dev., 40, 2331 (1993)

[9] Santucci S, Alfonsetti R, Di Giacomo A, Fiorani P, Lozzi L, Moccia G, Ottaviano L, Passacantando M, Picozzi P, J. Non-Cryst. Solids, 216, 156 (1997)

[10] Stengl R, Tan T, Gosele U, Jpn. J. Appl. Phys., 28(10), 969 (1989)

[11] Backlund Y, Hermansson K, Smith L, J. Electrochem. Soc, 139(8), 2299 (1992)

[12] Martini T, Steinkirchner J, Gosele U, J. Electrochem. Soc, 31(1), 3549 (1997)

[13] Lee JW, PhD. thesis (Seoul National University (1999)) (1999)

[14] Haisma J, Michielsen TM, Spierings GACM, Jpn. J. Appl. Phys., 28(5), L725 (1989)