Epitaxial VO2 film was produced through post-reduction of vanadium oxide film grown on rutile TiO2(1 1 0) by atomic layer deposition (ALD) method. The ALD grown film was transformed to VO2 after annealing at 350 degrees C under 2% hydrogen gas flow. Metal-insulator phase transition of the transformed VO2(1 1 0) film has been characterized with resonance photoemission and soft X-ray absorption spectroscopy. Formation of high quality film is evident from clear metal-insulator transition features in oxygen K-edge absorption spectra and metallic peaks in the Fermi level in V 2p-3d resonance photoemission map taken at 127 degrees C. The VO2 film formation through the post-reduction of ALD grown vanadium oxide at considerably low temperature could provide route to incorporate VO2 conformal layer into an integrated device utilizing the metal-insulator transition. (C) 2014 Elsevier B.V. All rights reserved.