This paper introduces issue of kinetically controlled and temperature driven superstructural phase transition of Indium (In) on atomically clean high index Si(5 5 7)-7 x 1 surface. Auger electron spectroscopy analysis reveals that at room-temperature (RT) with a controlled incident flux of 0.002 ML/s; In over layers evolve through the Frank-van der Merwe growth mode and yield a (1 x 1) diffraction pattern for coverage >= 1 ML For substrate temperature <500 C, growth of In follows Stranski-Krastanov growth mode while for temperature >500 degrees C island growth is observed. On annealing the In/Si(5 5 7) interface in the temperature range 250-340 degrees C, clusters to two dimensional (2D) layer transformation on top of a stable monolayer is predominated. In-situ RT and HT adsorption and thermal desorption phenomena revealed the formation of coverage and temperature dependent thermally stable In induced superstructural phases such as (4 x 1) at 0.5 ML (520 C), (root 3 x root 3-R30 degrees) at 0.3 ML (560 C) and (7 x 7) at 0.1 ML (580 C). These indium induced superstructures could be utilized as potential substrate for the growth of various exotic 1D/2D structures. (C) 2014 Elsevier B.V. All rights reserved.