Ag-S codoped ZnO films have been grown on quartz substrates by e-beam evaporation at low temperature (100 degrees C). The effects of Ag2S content on the structural and electrical properties of the films were investigated. The results showed that 2 wt% Ag2S doped films exhibited p-type conduction, with a resistivity of 0.0347 Omega cm, a Hall mobility of 9.53 cm(2)V(-1)s(-1), and a hole concentration of 1.89 x 10(19)cm(-3) at room temperature. The X-ray photoelectron spectroscopy measurements showed that Ag and S have been incorporated into the films. To further confirm the p-type conduction of Ag-S codoped ZnO films, a ZnO:(Ag, S)/i-ZnO/ZnO:Al homojunction was fabricated and rectifying behaviors of which was measured. High electrical performance and low growth temperature indicate that Ag2S is a promising dopant to fabricate p-type Ag-S codoped ZnO films. (C) 2014 Elsevier B.V. All rights reserved.