The wetting of ce-SiC by molten Al and Al-Si alloys was investigated using a dispensed sessile drop method in a high vacuum. In the Al-SiC system, representative wetting stages were identified. The liquid spreading was initially controlled by the deoxidation of the SiC surface and then by the formation of Al4C3 at the interface. The intrinsic contact angle for molten Al on the polycrystalline alpha-SiC surface was suggested to be lower than 90 degrees provided that the oxide films covering the Al and SiC surfaces were removed, i.e., the system is partial wetting in nature. An increase in the Si concentration in liquid Al weakened the interfacial reaction but improved the final wettability. The role of the Si addition on the wetting was presumably attributed to its segregation at the interface and the formation of strong chemical bonds with the SiC surface. (C) 2014 Elsevier B.V. All rights reserved.