In this research, we used MoO3 with CF4 plasma treatment as charge trapping layer in metal-oxide-high-k-oxide-Si-type memory. We analyzed material properties and electrical characteristics with multiple analyses. The plasma treatment could increase the trapping density, reduce the leakage current, expand band gap, and passivate the defect to enhance the memory performance. The MoO3 charge trapping layer memory with suitable CF4 plasma treatment is promising for future nonvolatile memory applications. (C) 2014 Elsevier B.V. All rights reserved.