Novel atomic layer deposition (ALD) process to deposit high-quality SrCoO3-delta thin films is introduced. Linear film growth is demonstrated within the film-thickness range of 15-300 nm. Post-annealing at 600 degrees C (in 02 or N2 atmosphere) is required to crystallize the as-deposited amorphous films. The new ALD process produces SrCoO3-delta films with a precisely controlled cation stoichiometry (+/- 2.5%) and an appreciably high growth rate (1.67A per supercycle), hence providing us with a prominent method of fabricating high-quality SrCoO3-delta thin films in a readily scalable manner e.g. for intermediate-temperature solid oxide fuel cell cathodes. (C) 2014 Elsevier B.V. All rights reserved.