Applied Surface Science, Vol.324, 30-34, 2015
Effects and mechanisms of RIE on SiC inversion layer mobility and its recovery
We report the use of hydrogen annealing to implement the substantial recovery of the a-face (1 1 (2) over bar 0) crystal structure and the 4H SiC MOSFET inversion layer mobility following material degradation by reactive ion etching (RIE). The results impact the processing of SiC trench MOSFETs where the a-face sidewall forms a significant portion of the conducting semiconductor channel. (C) 2014 Elsevier B.V. All rights reserved.