화학공학소재연구정보센터
Chemical Physics Letters, Vol.624, 69-73, 2015
Adsorption dynamics of tetrahydrofuran on Si(001) studied by means of molecular beam techniques
The reactivity of tetrahydrofuran (THF) on Si(0 0 1) was measured as a function of kinetic energy, surface temperature, and THF exposure. The initial sticking coefficient s(0) drops with increasing kinetic energy indicating an overall non-activated adsorption pathway. At constant kinetic energy, s(0) is insensitive on surface temperature T-S below 400 K but decreases with increasing T-S above 400 K. This behavior is quantitatively described using the Kisliuk model for molecules trapped in an intermediate adsorption state and discussed in the context of a datively bonded intermediate in the reaction channel. (C) 2015 Elsevier B.V. All rights reserved.