Silicon carbide materials represent a promising alternative in the refractory lining of high-efficiency gasification reactors. Here, recrystallised silicon carbide (RSiC) materials consisting of a threedimensional SiC scaffold without additional binding phases were investigated. Thereby, the infiltration of the emerging ashes could be observed, but no interactions with the RSiC. The results also demonstrate that the high stability of RSiC can be further improved by impregnation with carbon or ZrO2.