Power amplifier circuits are implemented with graphene field-effect transistors (FETs), capacitors and inductors, and their gain is improved step-by-step by adjusting the passive components. The transistors are fabricated on a 150-mm wafer using conventional complementary-metal-oxide semiconductor processing along with graphene transferring processes. The completed circuit is implemented on a printed circuit board, which allows for adjustment of the external capacitance and inductance to study the performance of graphene RF FETs. A maximum signal gain of 1.3 dB is achieved at 380 MHz. The device parameters of the transistors are then extracted and the gain is analyzed, and the results show that lowering the source drain conductance and gate resistance is the key in realizing high performance circuits. (C) 2014 Elsevier B.V. All rights reserved.