The heating of a silicon wafer in a rapid thermal process is studied by numerical simulation. In the model, the equations of conservation of mass and energy are solved with the finite-volume method and the determination of the solutions of the radiative transfer equation is based on the Monte-Carlo method. The results of numerical simulations, without optimization and in steady state, show a close relationship between the thermal profiles of the silicon wafer and the ones of the quartz window. By introducing a high thermal diffusivity value for the window, the homogeneity of the wafer temperature is improved by 54%. The effect of heat storage by the quartz window on the temperature profile of the silicon substrate is hence well appreciated. Finally, a selection of materials is proposed for the implementation of the high diffusivity infrared window.