A high-temperature/high-pressure method was employed to investigate phase formation in the Th(NO3)(4)center dot 5H(2)O-As2O3-CsNO3 system. It was observed that an excess of arsenic(III) in starting system leads to the formation of Th((As4As4O18)-As-III-O-v), which is representative of a rare dass of mixed-valent arsenic(III/arsenic(V) compounds. This compound was studied with X-ray diffraction, energydispersive X-ray, and Raman spectroscopy methods. Crystallographic data show that Th((As4As4O18)-As-III-O-v) is built from ((As4As4O18)-As-III-O-v)(4-) layers connected through Th atoms. The arsenic layers are found to be isoreticular to those in previously reported As2O3 and As3O5(OH), and the geometric differences between them are discussed. Bands in the Raman spectrum are assigned with respect to the presence of AsO3 and AsO4 groups.