Selective area etching and growth in the metalorganic vapor phase epitaxy (MOVPE) reactor on nano scale structures have been examined. Using different mask orientations, crystallographic dependent etching of InP can be observed when carbon tetrabromide (CBr4) is used as an etchant. Scanning Electron Microscopy (SEM) investigation of etch profiles showed formation of a U-shaped groove along the [0 (1) over bar(1) over bar] direction, terminated by {111}B planes with an similar to 15 nm {100} plateau and transitional {311}B planes, developed in a self-limiting manner. In the perpendicular direction [0 (1) over bar1] etching with a dominant lateral component driven by fast etched {111}A and {311}A side planes was observed. A directly grown single InGaAs QW in the etched grooves demonstrated different QW profiles: a crescent shaped on {311}B and {100} planes (along the [0 (1) over bar(1) over bar] direction) and two separated quarter-circle curvatures grown preferably on {311}A along [0 (1) over bar(1) over bar]. Room temperature micro photoluminescence measurements indicated a wavelength red shift in over 125 nm along [01 (1) over bar(1) over bar] comparing to [0 (1) over bar1], which is related to both growth enhancement and composition variation of the grown material. (C) 2014 Elsevier B.V. All rights reserved,