Examination of growth rate during hydride vapor phase epitaxy of GaN on ammonothermal GaN seeds

Sochacki T; Amilusik M; Fijalkowski M; Lucznik B; Weyher JL; Grzegory I; Kucharski R; Iwinska M; Bockowski M

Journal of Crystal Growth, Vol.407, 52-57, 2014

DOI10.1016/j.jcrysgro.2014.09.007 Export Citation

Examination of growth rate during hydride vapor phase epitaxy of GaN on ammonothermal GaN seeds

Sochacki T, Amilusik M, Fijalkowski M, Lucznik B, Weyher JL, Grzegory I, Kucharski R, Iwinska M, Bockowski M

One of the main advantages of the hydride vapor phase epitaxy (HVPE) method for crystallizing bulk gallium nitride is the crystallization of GaN with a relatively high growth rate (> 100 mu m/h). In this paper various growth rates in the c-direction during crystallization of GaN by HVPE on ammonothermalty grown GaN crystals are determined and examined. The influence of the highest (380 mu m/h) and the lowest (40 mu m/h) growth rate on the structural quality and purity of the HVPE-GaN crystals is analyzed. The optimal macroscopically stable growth rate (without cracks and pits) and the way of achieving it are presented and discussed. (C) 2014 Elsevier B.V. All rights reserved.

Keywords:Characterization;Hydride vapor phase epitaxy;GaN;Nitrides;Semiconducting III-V materials