InGaN strained bulk layers were grown by low-pressure metalorganic chemical vapor deposition on c-plane GaN/sapphire templates. Two growth regimes, mass transport limited regime and indium desorption regime, were examined for InGaN growth. In the indium desorption regime, more indium source must be fed to keep a constant indium content. In the indium desorption regime, we found an abnormally enhanced GaN growth rate, which was proved to be related to the indium desorption and dependent on the growth temperature and the indium source flow. Due to the enhanced growth rate, the optical quality of In0.16Ga0.84N layers degraded significantly. (C) 2014 Elsevier B.V. All rights reserved.