Axial distribution of deep-level defects in as-grown CdZnTe: In ingots and their effects on the material's electrical properties

Xu LY; Jie WQ; Fu X; Bolotnikov AE; James RB; Feng T; Zha GQ; Wang T; Xu YD; Zaman Y

Journal of Crystal Growth, Vol.409, 71-74, 2015

DOI10.1016/j.jcrysgro.2014.09.039 Export Citation

Axial distribution of deep-level defects in as-grown CdZnTe: In ingots and their effects on the material's electrical properties

Xu LY, Jie WQ, Fu X, Bolotnikov AE, James RB, Feng T, Zha GQ, Wang T, Xu YD, Zaman Y

We investigated the distribution of deep level defects in Cd2nTe:In ingots along the growth direction using thermally stimulated current (TSC) spectra. Higher concentration of Te antisite-related deep donors were found in the tail region due to Te enrichment in the melt as solidification proceeded. The compensation between In-cd(+) defects and Cd vacancies results in low concentration of net free electrons. High resistivity with n-type conduction was demonstrated from the I-V analysis. Hall mobility is lower in the tail due to higher concentration of Te antisite-related deep donors. (C) 2014 Elsevier B.V. All rights reserved,

Keywords:Characterization;Defects;Bridgman technique;Semiconducting II-VI materials