In this work, the influence of sapphire mis-orientation on the quality of coalesced (11 (2) over bar2) GaN layers grown on r-plane prestructured sapphire substrates (r-PSS) is investigated, It was Found that the angle of the GaN (11 (2) over bar2) plane towards the surface plane of the sapphire wafer can be adjusted by the mis-orientation of the substrate. Furthermore, we discovered that the c-direction of GaN is tilted by more than 1 degrees towards the c-direction of the sapphire wafer. In a second experiment, the influence of the MOVPE growth temperature, V/III ratio and reactor pressure On the coalesced layer has been studied. While a high temperature and small Will ratio are beneficial, the reactor pressure did not show any significant impact on the crystal quality and surface roughness. (C) 2014 Elsevier B.V. All rights reserved.