The chemically synthesized suppressor and leveler are added together with bis(3-sulfopropyl)disulfide (SPS) to galvanostatically fill up the trenches with the similar dimensions to those of the through silicon vias. In our previous study, the deposition of the coarse-grained Cu was indicated as a drawback of the synthesized additives, i.e., polyoxy polymer with amine terminal groups and pyridine derivatives containing additional amine groups. In this study, the modified chemistry of organic additives is used, enabling the bottom-up filling of trenches and improving the microstructure of the deposited Cu. The conversion of the functional groups from amine to hydroxyl groups in both the suppressor and leveler, and the uniform adsorption of modified suppressor improved the microstructure of the deposited Cu. The void-free trench filling is induced by the selective adsorption and accumulation of SPS at the bottom and negligible deposition on the top and side-walls of the trenches. Based on the filling mechanism, the trenches with 9 mu m width and 50 mu m depth are galvanostatically filled in <= 20 min. (C) The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/), which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited. For permission for commercial reuse, please email: [email protected]. All rights reserved.