Materials Chemistry and Physics, Vol.154, 94-99, 2015
Effect of sintering temperature on microstructures and microwave dielectric properties of Zn2SnO4 ceramics
The microwave dielectric properties of Zn2SnO4 ceramics were investigated with a view to the use of such ceramics in mobile communication. Zn2SnO4 ceramics were prepared using the conventional solid-state method with various sintering temperatures. Dielectric constants (epsilon(r)) of 9.2-10.2 and unloaded quality factor (Q(u) x f) of 12,700-39,000 GHz were obtained at sintering temperatures in the range 1175 -1250 degrees C for 4 h. A maximum relative density of 95.7% was obtained for Zn2SnO4 ceramic, sintered at 1225 degrees C for 4 h. A dielectric constant (epsilon(r)) of 10.2, an unloaded quality factor (Q(u) x f) of 39,000 GHz, and a temperature coefficient of resonant frequency (tau(f)) of -84 ppm/degrees C were obtained when Zn2SnO4 ceramics were sintered at 1225 degrees C for 4 h. (C) 2015 Elsevier B.V. All rights reserved.