A thin film Mo oxide-nitride pseudocapacitive electrode was synthesized by electrodeposition of Mo oxide on Ti and a subsequent low-temperature (400 degrees C) thermal nitridation. Two nitridation environments, N-2 and NH3, were used and the results were compared. Surface analyses of these nitrided films showed partial conversion of Mo oxide to nitrides, with a lower conversion percentage being the film produced in N-2. However, the electrochemical analyses showed that the surface of the N-2-treated film had better pseudocapacitive behaviors and outperformed that nitrided in NH3. Cycle life of the resultant N-2-treated Mo oxide-nitride was also much improved over Mo oxide. A two-electrode cell using Mo oxide-nitride electrodes was demonstrated and showed high rate performance. (C) 2015 Elsevier B.V. All rights reserved.