Growth and luminescent properties of scintillators based on the single crystalline films of Lu3-xGdxAl5O12:Ce garnet

Zorenko Y; Gorbenko V; Vasylkiv J; Zelenyj A; Fedorov A; Kucerkova R; Mares JA; Nikl M; Bilski P; Twardak A

Materials Research Bulletin, Vol.64, 355-363, 2015

DOI10.1016/j.materresbull.2015.01.020 Export Citation

Growth and luminescent properties of scintillators based on the single crystalline films of Lu3-xGdxAl5O12:Ce garnet

Zorenko Y, Gorbenko V, Vasylkiv J, Zelenyj A, Fedorov A, Kucerkova R, Mares JA, Nikl M, Bilski P, Twardak A

The work is related to the growth of scintillators based on the single crystalline films (SCF) of Ce3+ doped Lu3-GdxAl5O12 mixed rare-earth garnets by Liquid Phase Epitaxy (LPE) method. We have shown, that full set of Lu3-GdxAl5O12 SCFs with x values ranging from 0 to 3.0 can be successfully crystallized by the LPE method onto Y3Al5O12 (YAG) substrates from the melt-solutions based on Pb-O-B2O3 flux. The absorption, X-ray excited luminescence, photoluminescence, thermoluminescence and light yield measurements, the latter under excitation by a-particles of Pu-239 and Am-241 radioisotopes, were applied for their characterization. (C) 2015 Elsevier Ltd. All rights reserved.

Keywords:Thin films;Oxides;Epitaxial growth;X-ray diffraction;Crystal structure;Defects;Optical properties;Luminescence