Resistance-switching devices such as resistive random access memories (RRAMs) exhibit the ability to rapidly reduce resistance upon exceeding a threshold voltage, as part of the SET operation. For oxide-based RRAMs, the progressive generation of defects during SET requires strict regulation of the current, e.g., by a transistor, in order to avoid irreversible breakdown. In doing so, the current-limiting device itself takes some voltage burden. The observed negative differential resistance for both the initial (forming) and regular SET operations can be analytically explained with a basic circuit model for the current-limited switching element, linking the voltage transfer to the current-limiting device with the degree of current rise. Consequently, it is found that REAM operation current is a vital consideration for the reliability of the current-limiting device. (C) 2014 Elsevier Ltd. All rights reserved.