This paper reports a closed-form analytical drain current model for a fully-depleted (FD) SOI MOSFET on the inversion region in nanoscale regime. The proposed analytical approach involves all the important physical models which are essential in the nanoscale structures. The analytical threshold voltage model is used to take into account the critical short channel effects (SCEs) for the nanoscale SOI MOSFETs. The proposed analytical drain current model considering lattice and electron temperatures, self-heating effect (SHE), nonlocal impact ionization and parasitic bipolar effect shows an excellent match with experimental data for a 40 nm node technology. The realized analytical model is suitable for analyzing the devices with short and long channel lengths and therefore it can be considered as an efficient and flexible model to accurately predict the drain current of the FD-SOI devices. (C) 2014 Elsevier Ltd. All rights reserved.