In this work, the effects of nitrous oxide plasma treatment on the negative bias temperature stress of indium tin zinc oxide (ITZO) and indium gallium zinc oxide (IGZO) thin film transistors (TFTs) were reported. ITZO TFTs were more suitable for the back channel etched-type device structure because they could withstand both Al- and Cu-acid damage. The initial threshold voltage range could be controlled to within 1 V. The root cause of poor negative bias temperature stress for ITZO was likely due to a higher mobility (similar to 3.3 times) and more carbon related contamination bonds (similar to 5.9 times) relative to IGZO. Finally, 65 '' active-matrix organic light-emitting diode televisions using the ITZO and IGZO TFTs were fabricated. (C) 2014 Elsevier Ltd. All rights reserved.