We report a two-step growth process for the fabrication of (222)-plane textured indium tin oxide (ITO) films. A thin ITO seed layer was grown in mixed Argon + Oxygen gases, followed by a thick ITO deposited in Argon gas. X-Ray diffraction shows that the sputtered ITO films exhibit strongly preferred (222) crystalline orientation. The (222)-plane textured ITO films have high transmittance above 80% in the visible range and carrier concentration, mobility and resistivity in the range of 10(21) cm(-3), 40 cm(2)/Vs and 10(-4) Omega.cm, respectively. The surface roughness of our (222) textured ITO films is 1.4 nm, which is one of the smallest value obtained from sputtered ITO thin films. (C) 2014 Elsevier B.V. All rights reserved.