The film properties and solar cell performances of hydrogenated amorphous silicon (a-Si:H) fabricated by a newly developed non-vacuum process "Liquid-Si printing method" were systematically investigated by comparing to the conventional plasma-chemical vapor deposition method. The as-printed a-Si:H films showed relatively high Urbach-tail characteristic energy (E-ch), high [Si-H-2]/[Si-H], and low photoconductivity (similar to 10(-7) S/cm). However, the [Si-H-2]/[Si-H] decreased, and the photoconductivity was improved to the device grade level (similar to 10(-5) S/cm) after appropriate catalytic-generated atomic hydrogen treatment. It was also found that the light-induced degradation of the photoconductivity and solar cell efficiency of the printed samples were less than half of the conventional a-Si: H case. (C) 2014 Elsevier B.V. All rights reserved.