Web-패턴 Si 광다이오드의 감도특성 개선

장지근; 이상열; 김장기; Gee-Keun Chang; Sang-Yeoul Yi; Chang-Ki Kim

Korean Journal of Materials Research, Vol.11, No.4, 247-250, April, 2001

Export Citation

Web-패턴 Si 광다이오드의 감도특성 개선

Sensitivity Improvement of the Web Patterned Si Photodiode

장지근, 이상열, 김장기

단국대학교 전자공학과

Gee-Keun Chang, Sang-Yeoul Yi, and Chang-Ki Kim

Department of Electronics Engineering, Dankook University, Chungnam 330-714, Korea

초록

광이 입사되는 수광면에 그물망(web)모양의 얕은 P + -diffusion 영역을 갖는 새로운 구조의 적색광 검출 Si pin photodiode를 제작하고 그 특성을 분석하였다. 제작된 소자의 전기.광학적 특성을 -5V의 동작전압에서 측정한 결과, 접합 커패시턴스와 암전류는 각각 4pF와 235pA로 나타났으며 670nm의 중심파장을 갖는 1.6㎼의 입사광 전력 아래에서 광신호 전류와 감도특성은 각각 0.48 μA 와 0.30A/W로 나타났다. 제작된 소자는 종래의 circular type photodiode에 비해 개선된 감도 특성을 나타내었으며 670~700nm의 파장영역에서 최대 spectral response를 보였다. 본 연구에서의 web-patterned Si photodiode는 red light optics 응용에서 디지털 신호처리시 우수한 신호분리 능력을 나타낼 것으로 기대된다.

We have fabricated and evaluated a new Si pin photodiode for red light detection with the web patterned p + -shallow diffused region in the light absorbing area. From the measurements of electro-optical characteristics under the bias of -5V, the junction capacitance of 4pF and the dark current of 235pA were obtained. When the 1.6㎼ optical power with peak wavelength of 670nm was incident on the device, the optical signal current of 0.48 μA and the responsivity of 0.30A/W were obtained. The fabricated device showed the improved sensitivity compared to the conventional circular type device and the maximum spectral response in a spectrum of 670~700nm. The web-patterned Si photodiode can be expected to have the good discrimination characteristics between digital signals in the application of red light optics.

Keywords:web patterned Si photodiode;optical signal current;sensitivity;spectral response;optical link

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[2] Vasey F, Arbet-Engels V, Batten J, et al., IEEE Trans. Nucl. Sci., Development of Radiation-Hard Optical Links for the CMS Tracker at CERN, 45(3), 331 (1998)

[3] Fukuda M, Microelectronics Reliability, Historical Overview and Future of Optoelectronics Reliability for Optical Fiber Communication Systems, 40, 27 (2000)

[4] Fiber Optic Device Data Book, Thoshiba, (1994) (1994)

[5] Chen W, Liu S, IEEE of Quantum Electronics, PIN Avalanche Photodiodes Model for Circuit Simulation, 32(2), 2105 (1996)

[6] Seto M, Mabesoone M, De Jager S, et al, Solid-State Electronics, Performance Dependence of Large-Area Silicon p-i-n Photodetector upon Epitaxial Thickness, 41(8), 1083 (1997)

[7] Yang ES, Microelectronic Devices, Mcgraw -Hill Book Co., (1998) (1998)

[8] Alley R, Ko PK, Voros K, 'Characterization of the Boron+ Planar Dopant Source Moisture Enhanced Process', Memorandum UCB/ERL M86/ 75, pp. 1-20,(1986) (1986)