화학공학소재연구정보센터
Korean Journal of Materials Research, Vol.11, No.3, 178-184, March, 2001
KLN 스퍼터링용 타겟의 제조 및 코닝 1737 유리 기판위에 성장시킨 박막의 광학적 성질
Target Preparation for KLN sputtering and optical properties of thin films deposited on Corning 1737 glass
초록
rf-마그네트론 스퍼터링 방법을 이용하여 높은 광투과성을 지니며 c-축 배향된 KLN 박막을 제작하였다. 하소 및 소결 과정을 거쳐서 균일하고 안정한 상태의 KLN 타겟을 제조하였다. KLN 타겟은 화학량론적인 조성 및 K가 30%, 60%, 그리고 Li가 각각 15%, 30% 과량된 조성을 사용하였으며 K와 Li의 휘발을 방지하기 위하여 낮은 온도에서 소결시켰다. 제조된 타겟을 사용하여 rf-magnetron sputtering 방법으로 박막을 제조하였으며, 이때 K가 60% Li가 30% 과량된 타겟으로 제조할 때 단일상의 KLN 박막을 얻을 수 있었다. KLN 박막은 코닝 1737 기판 위에서 우수한 결정성과 높은 c-축 배향성을 나타내었으며, 이때 박막의 성장조건은 고주파 전력 100 W, 공정 압력 150 mTorr, 기판 온도 58 0 ? C 였다. 가시광 영역에서 박막의 투과율은 약 90% 이고, 흡수는 333 nm에서 발생하였으며 632.8 nm에서 박막의 굴절율은 1.93이었다.
Transparent and highly oriented KLN thin films have been grown by an rf- magnetron sputtering deposition method. A homogeneous and stable KLN target was prepared by calcine and sintering process. For KLN target, stoichiometry and composition excess with K of 30% and 60%, and Li of 15% and 30% respectively, was prepared. The targets were sintered at low temperature to prevent vaporization of K and Li. KLN thin films were fabricated by rf-magnetron sputtering method using those targets. In this experiment, using the target of composition excessed with K of 60% and Li of 30%, single phase KLN thin film was produced. KLN thin film has excellent crystallinity and highly c-axis oriented on Corning 1737 substrate. Transmittance of thin film in visible range was 90%, absorption edge is 333 nm and refractive index at 632.8 nm was 1.93.
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