MOCVD 법으로 성장시킨 Al x Ga 1?x N  박막의 특성분석

김성익; 김석봉; 박수영; 이석헌; 이정희; 허증수; S.I. Kim; S.Y. Park; S.Y. Park; S.H. Lee; J.H. Lee; J.S. Huh

Korean Journal of Materials Research, Vol.10, No.10, 691-697, October, 2000

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MOCVD 법으로 성장시킨 Al x Ga 1?x N 박막의 특성분석

Characterization of Al x Ga 1?x N Thin Film Grown by MOCVD

김성익, 김석봉, 박수영, 이석헌¹, 이정희¹, 허증수

경북대학교 금속공학과
¹경북대학교 전자공학부

S.I. Kim, S.Y. Park, S.Y. Park, S.H. Lee¹, J.H. Lee¹, and J.S. Huh

Department of Metallurgical Engineering, Kyungpook National University, Taegu, Korea
¹School of Electronic and Elctrical Engineering, Kyungpook National University, Taegu, Korea

초록

자외선 검출소자로 응용될 수 있는 우수한 특성을 지진 Al x Ga 1?x N 박막을 MOCVD 법으로 성장시킨 후 박막의 구조적인 특성을 조사하였다. 사파이어 기판 위에 성장된 Al x Ga 1?x N 의 물리적인 특성을 평가하기 위해 Synchrotron Radiation XRD를 사용하였다. Al x Ga 1?x N 의 두께가 커질수록 박막의 결정성은 증가하였으며 아래층은 Undoped GaN의 결정성과 성장된 Al x Ga 1?x N 의 결정성이 서로 비례적인 상관관계를 가지고 있음을 알아내었다. Al 조성비는 막질에 크게 영향을 주었으며 조성비가 높아질수록 표면 형상은 매우 나빠졌다.

Al x Ga 1?x N thin layers are promising materials for optical devices in the UV regions. Al x Ga 1?x N thin layers w were grown on sapphire substrates by metalorgaruc chemical vapor deposition (MOCVD). The molar Al fraction and crystallinity of layers were deduced from synchrotron x-ray scattering experiment. Surface morphology were investigated using SEM and SPM. Al x Ga 1?x N layers crystallinity were related with undoped GaN crystallinity. The Al mole fraction of Al x Ga 1?x N layers affect the surface morphology of Al x Ga 1?x N layers. The surface morphology was roughe ened and the cracks were obse π ed by increasing the Al mole fractions.

Keywords:CVD;XRD;optical materials;thin films

[References]

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Nakamura S, Senoh M, Iwasa N, Nagahama S, Jpn. J. Appl. Phys., 34(7A), L797 (1995)
Haase MA, Qui J, Depuydt M, Cheng H, Appl. Phy. Lett., 59(11), 1272 (1991)
Park YS, Internaional Symposium on Blue Laser and Light Emitting Diodes, 289 (1996)
Amano H, Asahi T, Akasaki I, Jpn. J. Appl. Phys., 29(2), L205 (1990)
Sato M, J. Appl. Phys., 78(3), 2123 (1995)
Mohammad SN, Morkoc H, J. Appl. Phys., 78(6), 4200 (1995)
Murugkar S, Merlin R, Botchkarev A, Salvador A, Morkoc H, J. Appl. Phys., 77(11), 6042 (1995)
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Nakamura S, Mukai T, Senoh M, J. Appl. Phys., 71(11), 5543 (1992)
Akasaki I, Amano H, Internaional Symposium on Blue Laser and Ligh Emitting Diodes, 11 (1996)
Amano H, Sawaki N, Akasiki I, Toyoda Y, Appl. Phys. Lett., 48(5), 353 (1986)
Akasaki I, Amano H, Koide Y, Hiramatsu K, Sawaki N, J. Crystal Growth, 98, 209 (1989)
Nakamura S, Senoh M, Iwasa N, Nagahama S, Appl. Phys. Lett., 67(13), 1868 (1995)
Nakamura S, Jpn. J. Appl. Phys., 30(10A), L1705 (1991)
Press W, Tolan M, Stettner J, Seeck OH, Schlomka JP, Nitz V, Schwalowsky L, Muller-Buschbaum P, Bahr D, Physica B, 2211, 1 (1996)
Makino O, Nakamura K, Tachibna A, Tokunaga H, Akutsu N, Matsumoto K, Appl. Surf. Sci, 159-160, 374 (2000)
Lu DC, Duan S, J. Cryst. Growth, 208(1-4), 73 (2000)
Mihopoulos TG, Gupta V, Jensen KF, J. Crystal Growth, 195, 733 (1998)

[Related Articles]

[1] Nakamura S, Mukai T, Senoh M, Jpn. J. Appl. Phys., 30(12A), L1998 (1991)

[2] Nakamura S, Senoh M, Iwasa N, Nagahama S, Jpn. J. Appl. Phys., 34(7A), L797 (1995)

[3] Haase MA, Qui J, Depuydt M, Cheng H, Appl. Phy. Lett., 59(11), 1272 (1991)

[4] Park YS, Internaional Symposium on Blue Laser and Light Emitting Diodes, 289 (1996)

[5] Amano H, Asahi T, Akasaki I, Jpn. J. Appl. Phys., 29(2), L205 (1990)

[6] Sato M, J. Appl. Phys., 78(3), 2123 (1995)

[7] Mohammad SN, Morkoc H, J. Appl. Phys., 78(6), 4200 (1995)

[8] Murugkar S, Merlin R, Botchkarev A, Salvador A, Morkoc H, J. Appl. Phys., 77(11), 6042 (1995)

[9] Properties of group III Nitrides, Edgar JH, EMIS data reviews series/ INSPEC, v.11, pp.3, 1995 (1995)

[10] Nakamura S, Mukai T, Senoh M, J. Appl. Phys., 71(11), 5543 (1992)

[11] Akasaki I, Amano H, Internaional Symposium on Blue Laser and Ligh Emitting Diodes, 11 (1996)

[12] Amano H, Sawaki N, Akasiki I, Toyoda Y, Appl. Phys. Lett., 48(5), 353 (1986)

[13] Akasaki I, Amano H, Koide Y, Hiramatsu K, Sawaki N, J. Crystal Growth, 98, 209 (1989)

[14] Nakamura S, Senoh M, Iwasa N, Nagahama S, Appl. Phys. Lett., 67(13), 1868 (1995)

[15] Nakamura S, Jpn. J. Appl. Phys., 30(10A), L1705 (1991)

[16] Press W, Tolan M, Stettner J, Seeck OH, Schlomka JP, Nitz V, Schwalowsky L, Muller-Buschbaum P, Bahr D, Physica B, 2211, 1 (1996)

[17] Makino O, Nakamura K, Tachibna A, Tokunaga H, Akutsu N, Matsumoto K, Appl. Surf. Sci, 159-160, 374 (2000)

[18] Lu DC, Duan S, J. Cryst. Growth, 208(1-4), 73 (2000)

[19] Mihopoulos TG, Gupta V, Jensen KF, J. Crystal Growth, 195, 733 (1998)