Magnetron sputtering 법으로 제조된 Al-1%Cu/Tungsten Nitride 다층 박막

이기선; 김장현; 서수정; 김남철; Kee Sun Lee; Chang Hyun Kim; Soo Jung Suh; NAMCHUL Kim

Korean Journal of Materials Research, Vol.10, No.9, 624-628, September, 2000

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Magnetron sputtering 법으로 제조된 Al-1%Cu/Tungsten Nitride 다층 박막

Deposition process of Multi-layered Al-%Cu/Tungsten Nitride Thin Film

이기선 , 김장현¹, 서수정¹, 김남철

공주대학교 공과대학 신소재공학부
¹성균관대학교 공과대학 금속재료공학부

Kee Sun Lee , Chang Hyun Kim¹, Soo Jung Suh¹, and NAMCHUL Kim

Division of Advanced Materials Engineering, Kongju National University, Kongju 314-701, Korea
¹Division of Materials Science and Engineering, Sungkyunkwan University, Suwon, 440-746, Korea

초록

표면 탄성과 디바이스의 전극재료로 사용되는 Al-%Cu(4000 \AA )/tungsten nitride 박막을 magnetron sputtering 법으로 제조하고 전기저항을 평가한 비정질상의 tungsten nitride 박막을 제조할 수 있었고, 비정질 형성을 위해 질소비(R = N 2 /(Ar+ N 2 )가 10~40% 정도 필요하다. Tungsten nitride 박막의 잔류응력은 비정질이 형성되면서 급격히 감소되었다. 이러한 비정질 박막위에 Al-1%Cu 합금막이 형성되었다. 다층막은 453K에서 4시간 동안 열처리함으로써 3.6μΩ?cm 의 저항을 나타냈는데, 이는 박막내 결정립 성장과 결함의 감소에 기인하였다.

As a power durable-electrode in SAW filter, Al-1%Cu/tungsten nitride multi-layer thin film was fabricated by magnetron sputtering process. Tungsten nitride films had the amorphous phase at the nitrogen ratio, R, ranging from 10~40%. The amorphization could be controlled by nitrogen ratio, R= N 2 /( N 2 +Ar) as a sputtering process parameter. Residual stress in tungsten nitride abruptly decreased with the formation of amorphous phase. Al-1%Cu thin film was deposited on the amorphous tungsten nitride. After the multi-layed thin film was annealed for 4 hours at 453K, the resistivity decreased as 3.6μΩ?cm , which was due to grain growth reduced crystal defects.

Keywords:Conductor in SAW device;sputtering;tungsten nitride;residual stree;Al-Cu thin film

[References]

Ruppel CCW, Fiseberauer A, et al., IEEE Trans. Ultrason. Ferroelectri. Freq. Control., 40, 438 (1993)
Hikita M, Tabuchi Y, Shibakaki N, Takaki T, Electron. Lett, 28, 2507 (1992)
Latham JL, Shreve WR, et al., Thin Solid Film, 64, 9 (1979)
Ebata Y, Morishita S, IECE Trans., J67-C, 278 (1984)
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KIMURA N, NAKANO M, SATO K, Jpn. J. Appl. Phys., 37, 1017 (1998)
Nishihara T, Uchishiba H, lkata O, Satoh Y, Jpn. J. Appl. Phys., 34, 2688 (1995)
Lee KS, Korean J. Mater. Res., 10(1), 29 (2000)
Lee CW, Kim YT, Lee JY, Appl. Phys. Lett., 64(5), 31 (1994)
Kimura N, Nakano M, Nakazawa M, Sato K, Jpn. J. Appl. Phys., 36, 3601 (1997)

[Related Articles]

[1] Ruppel CCW, Fiseberauer A, et al., IEEE Trans. Ultrason. Ferroelectri. Freq. Control., 40, 438 (1993)

[2] Hikita M, Tabuchi Y, Shibakaki N, Takaki T, Electron. Lett, 28, 2507 (1992)

[3] Latham JL, Shreve WR, et al., Thin Solid Film, 64, 9 (1979)

[4] Ebata Y, Morishita S, IECE Trans., J67-C, 278 (1984)

[5] Kawakastsu T, Okada T, Leki H, Satoh Y, Jpn. Appl. Phys., 34, 2688 (1995)

[6] Kamijo A, Mistuzuka T, J. Appl. Phys., 77, 3799 (1995)

[7] Yamada J, Yuhara A, Proc. Int. Symp. SAW Devices for mobil Communication, 148 (1992)

[8] KIMURA N, NAKANO M, SATO K, Jpn. J. Appl. Phys., 37, 1017 (1998)

[9] Nishihara T, Uchishiba H, lkata O, Satoh Y, Jpn. J. Appl. Phys., 34, 2688 (1995)

[10] Lee KS, Korean J. Mater. Res., 10(1), 29 (2000)

[11] Lee CW, Kim YT, Lee JY, Appl. Phys. Lett., 64(5), 31 (1994)

[12] Kimura N, Nakano M, Nakazawa M, Sato K, Jpn. J. Appl. Phys., 36, 3601 (1997)