CH 4 ?H 2 ?N 2   기체계에서 MW-PACVD를 이용한 결정상 합성

김도근; 백영준; 성태연; Do-Geun Kim; Young-Joon Baik; Tae-Yeon Seoung

Korean Journal of Materials Research, Vol.10, No.9, 648-655, September, 2000

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CH 4 ?H 2 ?N 2 기체계에서 MW-PACVD를 이용한 결정상 합성

Synthesis of Crystalline film from CH 4 ?H 2 ?N 2 gases with MW-PACVD

김도근^{1, 2}, 백영준¹, 성태연 ²

¹한국과학기술연구원 박막기술연구센터
²광주과학기술원 신소재공학과

Do-Geun Kim^{1, 2}, Young-Joon Baik¹, and Tae-Yeon Seoung²

¹Thin Film Technology Research Center, Korea Institute of Science and Technology, Seoul 136-791, South Korea
²Department of Materials Science and Engineering, Kwangju Institutue of Science and Technology(K-JIST), Kwangju 500-712, South Korea

초록

다이아몬드 합성 조건에서 질소 첨가량은 0%에서 95%까지 변화하였을 때의 합성 거동을 조사하였다. 질소 첨가량이 증가함에 따라 합성된 상은 {100} 성장면으로 이루어진 다이아몬드 막에서 고유의 결정면이 사라지고 나조 크기의 결정들로 이루어진 다이아몬 막으로 변화하였다. 심지어 수소가 없어 메탄과 질소만의 경우에서도 다이아몬드 막 합성이 가능함을 보여주었다. 또한 다이아몬드 구조를 갖는 개별적 입자의 형태는 30%∼80% 질소 첨가범위에서 정팔면체의 결정모양을 가졌고, 이 범위에서 기판온도가 증가함에 따라 육방정 모양의 새로운 결정상을 관찰하였다. 다이아몬드 막의 경우 질소, 첨가량에 무관하게 질소 혼입향은 측정되지 않을 만큼 적었지만, 육방정 결정상은 Si, C 그리고 N으로 이루어진 SiCN화합물임을 확인하였다.

Synthesis of the crystalline film was investigated under the diamond growth condition with altering the addition of the nitrogen from 0% to 95%. With increasing the nitrogen concentration, surface morphology of the film was changed from the diamond film with {100} growth plane to the non-faceted diamond film with nano-scale grains. It also showed that the deposition of the diamond film could be synthesized using only methane and nitrogen gases without hydrogen gas. Separated particles with diamond structure showed an octahedral shaped I the nitrogen ranges between 30% and 80%, and newly formed hexagonal crystals are observed when substrate temperature with diamond structure, however, also identify that the hexagonal crystal was SiCN composite composed of Si, C and N atoms.

Keywords:chemical Vapor Deposition (CVD);Raman spectroscopy;diamond

[References]

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Boettger E, Bluhm A, Jiang X, Schafer L, Klages CP, J. Appl. Phys., 77, 6332 (1995)
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Deryagin BV, Fedoseeev DV, Surf. Coat. Technol., 38, 232 (1989)
Huong PV, Diam. Relat. Mater., 1, 33 (1991)
Cao GZ, Schermer JJ, Van Enckevort WJP, Elst WALM, Giling LJ, J. Appl. Phys., 79, 1357 (1996)
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Chen LC, Bhusari DM, Yang CY, Chen KH, Chuang TJ, Lin MC, Chen CK, Huang YF, Thin Solid Films, 303(1-2), 66 (1997)

[Related Articles]

[1] Franklin EC, J. Am. Chem. Soc., 44, 486 (1992)

[2] Mort J, Machonkin MA, Okumura K, Appl. Phys. Lett., 59, 3148 (1991)

[3] Boettger E, Bluhm A, Jiang X, Schafer L, Klages CP, J. Appl. Phys., 77, 6332 (1995)

[4] Bohr S, Haubner R, Lux B, Appl. Phys. Lett., 68, 1075 (1996)

[5] Muller-Sebert W, Worner E, Fuchs F, Wild C, Koidl P, Appl. Phys. Lett., 68, 759 (1996)

[6] Jin S, Moustakas TD, Appl. Phys. Lett., 65, 403 (1994)

[7] Locher R, Wild C, Herres N, Behr D, Koidl P, Appl. Phys. Lett., 65, 34 (1994)

[8] Cao GZ, Schermer JJ, Van Enckevert WJP, Elst WALM, Giling LJ, J. Appl. Phys., 79, 1357 (1996)

[9] Chatei H, Bougdira J, My MR, Alnot P, Bruch C, Kreger JK, Diam. Relat. Mater., 6, 107 (1997)

[10] Wolden CA, Draper CE, Sitar Z, Prater JT, Diam. Relat. Mater., 7, 1178 (1998)

[11] Badzian A, Badzian T, Appl. Phys. Lett., 62, 3432 (1993)

[12] Deryagin BV, Fedoseeev DV, Surf. Coat. Technol., 38, 232 (1989)

[13] Huong PV, Diam. Relat. Mater., 1, 33 (1991)

[14] Cao GZ, Schermer JJ, Van Enckevort WJP, Elst WALM, Giling LJ, J. Appl. Phys., 79, 1357 (1996)

[15] Properties and Growth of Diamond, Lang AR, Gordon Davies(ed.), EMIS Datareviews Series No. 9/ INSPEC, pp.112-115, 1994 (1994)

[16] Tsang RS, Rego CA, May PW, Ashfold MNR, Rosser KN, Dia. Relat. Mater., 6, 247 (1997)

[17] Chen LC, Bhusari DM, Yang CY, Chen KH, Chuang TJ, Lin MC, Chen CK, Huang YF, Thin Solid Films, 303(1-2), 66 (1997)