HF-CVD법에 의한 세라믹스 기판에의 다이아몬드박막 합성과 그 밀착성 평가

신순기; Hideaki Matsubara; Soon-Gi Shin; Hideaki Matsubara

Korean Journal of Materials Research, Vol.10, No.8, 575-580, August, 2000

Export Citation

HF-CVD법에 의한 세라믹스 기판에의 다이아몬드박막 합성과 그 밀착성 평가

Diamond Film Deposition on Ceramic Substrates by Hot-Filament CVD and Evaluation of the Adhesion

신순기, Hideaki Matsubara

Japan Fine Ceramics Center R&D Laboratory

Soon-Gi Shin, and Hideaki Matsubara

R&D Laboratory, Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-gu, Natoya 456-8587 Japan

초록

Ta(TaC) 필라멘트를 이용한 HF-CVD 법에 의하여 Si 3 N 4 , SiC, WC, Al 2 O 3 를 기판으로 다이아몬드 박막을 증착하고, 그 밀착특성을 평가하였다. 로내의 CH 4 농도를 10%로 높게 하였을 경우에는 막중에 graphitic(amorphous) carbon이 생성됨을 확인할 수 있었다. 박막을 12μm 정도까지 두껍게 하면, WC기판에서는 부분적 박리형상이 관찰되었으나, Si 3 N 4 를 기판으로 하였을 경우에는 안정한 박막을 얻을 수 있었다. Indentation test 결과로부터 grainding에 의한 기판표 처리가 밀착성 향상에 효과적이라는 것을 알 수 있었다. 또 compression topple test에서는 박막의 두께는 밀착성과 반비례의 관계를 가지는 것을 알 수 있었다.

Diamond thin films were deposited on Si 3 N 4 , SiC, TiC and Al 2 O 3 , substrates by the CVD method using Ta(TaC)Filament, and the appearance of the diamond films and their adhesion properties were examined by SEM, optical microscopy, indentation test and compression topple test. Diamond films were deposited at lower CH 4 concentration than 5% CH 4 for all kinds of the substrate material, but graphitic(amorphous)carbon was observed at 10% CH 4 . The diamond film of about 12μm thickness on WC substrate partly peeled off, but the film on Si 3 N 4 substrate held good adhesion. The indentation test showed that roughly ground surface was very effective for adhesion of diamond films to substrate. The topple test revealed that film thickness was an important factor governing the adhesion of the diamond film.

Keywords:Hot-filament CVD;TaC filament;diamond thin film;ceramic substrate;and adhesion

[References]

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[1] Spitsyn BV, Bouilov LL, Derjaguin BV, J. Crystal Growth, 52, 219 (1980)

[2] Matsumoto S, Sato Y, Tsutsumi M, Setake N, J. Mater. Sci., 17, 3106 (1982)

[3] Kamo M, Sato Y, Matsumoto S, Setake N, J. Crystal Growth, 62, 642 (1983)

[4] Matsumoto S, J. Mater. Sci. Lett., 4, 600 (1985)

[5] Sawabe A, Inuzuka Y, Appl. Phys. Lett., 46, 146 (1985)

[6] Hirose Y, Terasawa Y, Jpn J. Appl. Phys., 25, L519 (1986)

[7] Suzuki H, Matsubara H, Horie N, J. Jpn. Soc. Powder. Powder Metall., 33, 262 (1986)

[8] Suzuki H, Matsubara H, Horie N, J. Jpn. Soc. Powder. Powder Metall., 33, 281 (1986)

[9] Mitsuta Y, Kojima Y, Yoshida T, Akashi Y, J. Mater. Sci., 22, 1557 (1987)

[10] Koba RJ, Diamond Films Coating, 148 (1993)

[11] Mtsubara H, Sakuma T, J. Mater. Sci., 25, 4472 (1990)

[12] Tsutsumoto T, Nakao A, Matsubara H, Sato S(ed.), Fujimori N(ed.), Fukunaga O(ed.), Kamo M(ed.), Kobashi K(ed.), Yoshikawa M(ed.), Diamond Science Technology, 763 (1994)

[13] Field JE, The Properties of Diamond/ Academic Press, 1979 (1979)

[14] Samsonov GV, Vinitskii IM, Handbook of Refractory Compounds/ IFI/Plenum, 1980 (1980)