실리사이드를 이용한 새로운 고내구성 실리콘 전계방출소자의 제작

장지근; 윤진모; 정진철; 김민영; Gee Keun Chang; Jin Mo Yoon; Jin Cheol Jeong; Min Young Kim

Korean Journal of Materials Research, Vol.10, No.2, 124-127, February, 2000

Export Citation

실리사이드를 이용한 새로운 고내구성 실리콘 전계방출소자의 제작

Fabrication of New Silicided Si Field Emitter Array with Long Term Stability

장지근, 윤진모, 정진철, 김민영

단국대학교 전자공학과

Gee Keun Chang, Jin Mo Yoon, Jin Cheol Jeong, and Min Young Kim

Dept. of Electronics Engineering, Semiconductor Lab., Dankook University, Cheonan 330-714, Korea

초록

Si FEA로부터 tip의 표면을 Ti 금속으로 silicidation한 새로운 3극형 Ti-silicided Si FEA를 제작하고 이의 전계 방출특성을 조사하였다. 제작된 소자에서 단위 pixel(pixel area : 1000μm×1000$μm , tip array : 200μm×200$μm )을 통해 측정된 전계 방출 특성은 10 8 Torr 의 고진공 상태에서 turn-on 전압이 약 70V로, 아노드 방출전류의 크기와 current degradation이 V A =500V,V G =150V 바이어스 아래에서 각각 2nA/tip와 0.3%/min로 나타났다. 3극형 Ti-silicided Si FEA의 낮은 turn-on 전압과 높은 전류안정성은 Si tip 표면에 형성된 실리사이드 박막의 열화학적 안정성과 낮은 일함수에 기인하는 것으로 판단된다.

A new triode type Ti-silicided Si FEA(field emitter array) was realized by Ti-silicidation of Ti coated Si FEA and its field emission properties were investigated. In the fabricated device, the field emission properties through the unit pixel with 200μm×200$μm tip array in the area of 1000μm×1000$μm were as follows : the turn-on voltage was about 70V under high vacuum condition of 10 8 Torr , and the field emission current and steady state current degradation were about 2nA/tip and 0.3%/min under the bias of V A =500VandV G =150V . The low turn-on voltage and the high current stability during long term operation of the Ti silicided Si FEA were due to the thermal and chemical stability and the low work function of silicide layer formed at the surface of Si tip.

Keywords:Ti-silicided Si FEA;turn-on voltage;field emission current;silicidation;stability

[References]

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[1] Spindt CA, Brodie I, Humphrey L, Westerberg ER, J. Appl. Physics, 47(12), 5248 (1976)

[2] Brodie I, Schwoebel PR, Proc. of IEEE, 82(7), 1005 (1994)

[3] Iannazzo S, Solid-State Electronics, 36(3), 301 (1993)

[4] Wang CC, Ku TK, Hsieh LJ, Cheng HC, Jpn. J. Appl. Phys., 35(6A), 3681 (1996)

[5] Chi EJ, Shim JY, Baik HK, The 9th Int. Vac. Microelec. Conf., 188 (1996)

[6] Zaidman EG, IEEE Trans. Electron Devices, 40(5), 1009 (1993)

[7] Lee WS, Yu J, Kim JG, The 18th Int. Display Research Conf., 681 (1998)

[8] Takai M, Iriguchi T, Morimoto H, Hosono A, Kawabuchi S, IDW '97, 759 (1997)

[9] Park CM, Lim MS, Han MK, Physica Scripta, T79, 327 (1999)

[10] 이종덕, 전계방출 이론 및 응용/ 청범출판사, 1998 (1998)