증착온도가 저유전 a-C:F 박막의 특성에 미치는 영향

박정원; 양성훈; 박종완; Jeongwon Park; Sung-Hoon Yang; Jong-Wan Park

Korean Journal of Materials Research, Vol.9, No.12, 1211-1215, December, 1999

Export Citation

증착온도가 저유전 a-C:F 박막의 특성에 미치는 영향

Effect of Deposition Temperature on the Characteristics of Low Dielectric Fluorinated Amorphous Carbon Thin Films

박정원, 양성훈, 박종완

한양대학교 금속공학과

Jeongwon Park, Sung-Hoon Yang, and Jong-Wan Park

Dept. of Metallurgical Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-Gu, Seoul, 133-791, Korea

초록

a-C:F 박막은 C 2 F 6 와 CH 4 를 원료 가스로 하여 증착온도를 상온에서 300 ? C 까지 변화시켜가면서 ECRCVD 방법으로 증착하였다. 기판과 a-C:F 막 사이의 밀착력 향상을 위해 약 500 \AA C 두께의 DLC 박막을 기판 위에 증착하였다. 증착 온도에 따라 형성된 a-C:F 박막의 증착률, 화학적 결합상태, 결합구조와 원소의 조성비 등을 FTIR, XPS, AFM, 그리고 C-V측정으로부터 분석하였다. 증착 속도와 불소의 함량은 증착온도가 증가할수록 감소하였다. 불소의 상대원자비는 상온에서 증착한 경우 53.9at.%였으며, 300 ? C 에서 증착한 경우 41.0at.%로 감소하였다. 유전 상수는 증착온도가 상온에서 300 ? C 까지 증가함에 따라 2.45에서 2.71까지 상승하였다. 증착온도가 증가함으로써 막의 수축은 줄어들었으며 이는 높은 증착온도에서 막의 crosslinking 구조가 증가되었기 때문이다.

Fluorinated amorphous carbon (a-C:F) films were prepared by an electron cyclotron resonance chemical vapor deposition (ECRCVD) system using a gas mixture of C 2 F 6 and CH 4 over a range of deposition temperature (room temperature ~ 300 ? C ). 500 \AA C thick DLC films were pre-deposited on Si substrate to improve the strength between substrate and a-C:F film. The chemical bonding structure, chemical composition, surface roughness and dielectric constant of a-C:F films deposited by varying the deposition temperature were studied with a variety of techniques, such as Fourier transform infrared spectroscopy(FTIR), X-ray photoelectron spectroscopy(XPS), atomic force microscopy (AFM) and capacitance-voltage(C-V) measurement. Both deposition rate and fluorine content decreased linearly with increasing deposition temperature. As the deposition temperature increased from room temperature to 300 ? C , the fluorine concentration decreased from 53.9at.% down to 41.0at.%. The dielectric constant increased from 2.45 to 2.71 with increasing the deposition temperature from room temperature to 300 ? C . The film shrinkage was reduced with increasing deposition temperature. This results ascribed by the increased crosslinking in the films at the higher deposition temperature.

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[11] Endo K, Tatsumi T, Appl. Phys. Lett., 68(20), 2864 (1996)

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[13] Yasuda H, Plasma Polymerization (1985)