Phase-change optical disk very rapid recording, high densification of data, resulting in high feedback rate and good C/N(carrier to noise) ratio of a feedback signal. However, repetitive thermal energy may cause the deformation of a disk or the lowering of an eliminability and a cyclability of the recording. The lowering of the cyclability can be reduced by insertion of thin layer of ZnS- SiO 2 dielectric thin film in appropriate disk structure between the upper and lower part of the recording film. Using the Taguchi method, optimum conditions satisfying both the optimized quality characteristic values and the scattering values for film formation were found to be the target R.F. power of 200W, the substrate R.F. power of 20W, the Ar pressure of 6mTorr, and the electrode distance of 6cm. From the refractive index data, the existence of the strong interaction between the electrode distance and Ar pressure was confirmed, and so was the large effect of the electrode distance on transmittance. According to the analysis of TEM and XRD, the closer the electrode distance was, the finer was the grain size due to the high deposition rate. However, the closer electrode distance brought the negative effect on the morphology of the film and caused the reduction of transmittance. AFM and SEM analyses showed that the closer the electrode distance was, the worse was the morphology due to the high rate of the deposition. Under optimum condition, the deposited thin film showed a good morphology and dense microstructure with less defects.