rf PECVD법으로 증착된 a-C:H 박막의 결합구조에 미치는 보조가스의 영향

송재진; 김성진; Jea Jin Song; Sung Jin Kim

Korean Journal of Materials Research, Vol.9, No.11, 1088-1094, November, 1999

Export Citation

rf PECVD법으로 증착된 a-C:H 박막의 결합구조에 미치는 보조가스의 영향

Effect of Additive Gas on the Bonding Structure of a-C:H Films Deposited by rf PECVD

송재진, 김성진 ¹

한국전자(주)
¹금오공과대학 재료금속공학부

Jea Jin Song, and Sung Jin Kim¹

Korea Electronics Co., Ltd., 149 Gongdan 1 Dong, Kumi 730-031, Korea
¹Dept. of Materials Science and Metallurgical Engineering, Kumoh National University of Technology, 188 Shinpyung-dong, Kumi Korea

초록

본 연구에서는 rf PECVD(13.56MHz)법을 이용하여 CH 4 가스에 소량의 보조가스( O 2 와 N 2 )를 혼합하여 a-C:H 박막을 얻었다. 이렇게 얻어진 박막의 증착속도는 rf power 증가에 따라서 증가하다가 200W에서는 다시 감소하였으며, 산소와 질소가스의 유량이 증가함에 따라 감소하였다. FT-IR분석으로 계산된 박막내의 수소함량은 rf power 증가와 산소 및 질소첨가량의 증가에 따라 감소하였다. 산소가스 첨가 시에는 C=O 결합이 생성되며, 질소가스 첨가 시에는 C=N 결합이 생성됨을 FT-IR 분석을 통하여 알 수 있었다. 이와 같이 산소와 질소를 보조가스로 첨가할 경우에 스퍼터링 효과로 박막내의 수소함량 감소와 더불어 a-C:H 박막의 구조 변화를 일으킬 수 있을 것으로 생각된다. Raman 분석결과 산소와 질소를 첨가함에 따라서 I(sub)D/I(sub)G비가 증가하였고, D line과 G line의 위치가 높은 파수 쪽으로 이동하였으며, D line의 폭은 넓어지는 반면에 G line의 폭은 감소됨을 보였다. 이것은 산소와 질소의 첨가로 박막내의 수소함량 감소, 결합각의 disorder 감소 및 micro-crystallite 흑연의 형성에 의한 것이라고 판단된다.

Diamond-like carbon(DLC or a-C:H) films were deposited by rf PECVD method using CH4 gas mixed with small amount of oxygen or nitrogen gas. The bonding structrure change of the a- C:H films was investigated by FT-IR analyzer and Raman Spectroscopy. The hydrogen content and the sp3/sp2 ratio of the a-C:G film were analyzed by FT creasing the addition of exygen and nitrogen gas in reaction chamber. The hydrogen content of DLC films showed decreasing tendency with the increase of the rf power and the addition of eoxygen and nitrogen gas. As the addition of oxygen and nitrogen in reaction gas increased, the ratio of I/I increased, the wavenumber of the D line and G line were shifted gradually toward higher wavenumber, the width of D line was broadened and the width of the G line was reducted. These results may be due to the low hydrogen content, the bond-angle disorder and the formation of the small graphitic micro-crystallite in a-C:H films.

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Kudoyarova VK, Chernyshov AV, Zvonareva TK, Surf. Coat. Technol., 100, 192 (1998)
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He X, Li W, Li H, J. Vac. Sci. Technol., A11(6), 2964 (1993)
Palshin V, Meletis EI, Ves S, Logothetidis S, Thin Solid Films, 270(1-2), 165 (1995)
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Camargo SS, Santos RA, Neto ALB, Carius R, Finger F, Thin Solid Films, 332(1-2), 130 (1998)
Chhowalla M, Alezaandrou I, Kiely C, Amaratunga GAJ, Aharonov R, Fontana RF, Thin Solid Films, 290, 103 (1996)
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Kobayashi S, Nozaki S, Marisaki H, Thin Solid Films, 281, 289 (1996)
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Kaltofen R, Sebald T, Wise G, Thin Solid Films, 290, 112 (1996)
Chin EY, Korean J. Mater. Res., 6(3), 324 (1996)
Choi W, Kim HJ, Nam SE, Korean J. Mater. Res., 7(1), 8 (1997)
Mutsukura N, S.I, Machi Y, J. Appl. Phys., 72(1), 43 (1992)
Kim SY, Lee JS, Park JS, Korean J. Ceramics, 4(1), 20 (1998)
Beeman D, Silverman J, Lynds R, Anderson MR, Phys. Rev. B, 30(2), 870 (1984)
Kaufman JH, Metin S, Phys. Rev. B, 39(18), 13053 (1989)
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Reinke P, Jacob W, Moller W, J. Appl. Phys., 74(2), 1354 (1993)

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[2] Kudoyarova VK, Chernyshov AV, Zvonareva TK, Surf. Coat. Technol., 100, 192 (1998)

[3] Vandentop GJ, Kawasaki M, Nix RM, Brown IG, Salmeron M, Somorjai GA, Physical Review B, 41(5), 3200 (1990)

[4] Kokaku Y, Kohno M, Fujinaki S, Kitoh M, J. Vac. Sci. Technol., A9(3), 1162 (1991)

[5] Fourches N, Turban G, Thin Solid Films, 240(1-2), 28 (1994)

[6] Zou JW, Schmidt K, Reichelt K, Dischler B, J. Appl. Phys., 67(1), 487 (1990)

[7] He X, Li W, Li H, J. Vac. Sci. Technol., A11(6), 2964 (1993)

[8] Palshin V, Meletis EI, Ves S, Logothetidis S, Thin Solid Films, 270(1-2), 165 (1995)

[9] Lee KR, Eun KY, Bull. of the Korean Inst. of Met. Mater., 6(4), 178 (1993)

[10] Dillon RO, Woolam JA, Katkanant V, Phys. Rev., B29, 3482 (1984)

[11] Camargo SS, Santos RA, Neto ALB, Carius R, Finger F, Thin Solid Films, 332(1-2), 130 (1998)

[12] Chhowalla M, Alezaandrou I, Kiely C, Amaratunga GAJ, Aharonov R, Fontana RF, Thin Solid Films, 290, 103 (1996)

[13] Liu S, Gangopadhyay S, Phys. Rev., 55(19), 13020 (1997)

[14] Kobayashi S, Nozaki S, Marisaki H, Thin Solid Films, 281, 289 (1996)

[15] Shiao J, Hoffman RW, Thin Solid Films, 283(1-2), 145 (1996)

[16] Kaltofen R, Sebald T, Wise G, Thin Solid Films, 290, 112 (1996)

[17] Chin EY, Korean J. Mater. Res., 6(3), 324 (1996)

[18] Choi W, Kim HJ, Nam SE, Korean J. Mater. Res., 7(1), 8 (1997)

[19] Mutsukura N, S.I, Machi Y, J. Appl. Phys., 72(1), 43 (1992)

[20] Kim SY, Lee JS, Park JS, Korean J. Ceramics, 4(1), 20 (1998)

[21] Beeman D, Silverman J, Lynds R, Anderson MR, Phys. Rev. B, 30(2), 870 (1984)

[22] Kaufman JH, Metin S, Phys. Rev. B, 39(18), 13053 (1989)

[23] Farrow LA, Wilkens BJ, Gozdz AS, Hart DL, Phys. Rev. B, 41(14), 10132 (1990)

[24] Reinke P, Jacob W, Moller W, J. Appl. Phys., 74(2), 1354 (1993)