W/InGaN Ohmic 접촉의 전기적 구조적 특성

김한기; 성태연; Han-Ki Kim; Tae-Yeon Seong

Korean Journal of Materials Research, Vol.9, No.10, 1012-1017, October, 1999

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W/InGaN Ohmic 접촉의 전기적 구조적 특성

Electrical and Structure Properties of W Ohmic Contacts to In x Ga 1?x N

김한기, 성태연

광주과학기술원 신소재공학과

Han-Ki Kim, and Tae-Yeon Seong

Department of Materials Science and Engineering, Kwangju Institute of Science and Tecnology(K-JIST), Kwangju, 500-712, Korea

초록

Si 도핑된 n- In 0.17 Ga 0.83 N ( 1.63×10 19 cm ?3 )에 W을 이용하여 낮은 접촉저항을 갖는 Ohmic 접촉을 형성시켰다. 열처리 온도를 증가시킴에 따라 비접촉 저항이 낮아졌으며, 가장 낮은 비접촉 저항은 950 ? C 의 질소분위기 하에서 90초간 열처리 해줌으로써 2.75×10 ?8 Ωcm ?3 의 낮은 비접촉 저항값을 얻었다. 열처리 온도증가에 따른 In 0.17 Ga 0.83 N 와 W의 계면반응과 W의 표면은 XRD와 SeM을 이용하여 분석하였다. XRD 분석을 통하여 W과 In 0.17 Ga 0.83 N 이 반응하여 계면에 β - W 2 N 상을 형성시킴을 확인할 수 있었다. SEM 분석결과 W 표면은 850 ? C 의 높은 열처리온도에서도 안정한 상태를 유지하였다. W과 InGaN의 Ohmic 접촉에 있어 비접촉 저항은 열처리 온도를 증가시킴에 따라 낮아지게 되는 온도 의존성을 갖는데 이에 대한 가능한 기구를 제시하였다.

Low resistance ohmic contacts to the Si-doped In 0.17 Ga 0.83 N (~ ×10 19 cm ?3 ) were obtained using the W metallization schemes. Specific contact resistance decreased with increasing annealing temperature. The lowest resistance is obtained after a nitrogen ambient annealing at 950 ? C for 90 s, which results in a specific contact resistance of 2.75×10 ?8 Ωcm ?3 . Interfacial reactions and surface are analyzed using x-ray diffraction and scanning electron microscopy (SEM). The X-ray diffraction results show that the reactions between the W film and the In 0.17 Ga 0.83 N produce a β - W 2 N phase at the interface. The SEM result shows that the morphology of the contacts is stable up to a temperature as high as 850 ? C . Possible mechanisms are proposed to describe the annealing temperature dependence of the specific contact resistance.

[References]

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[Related Articles]

[1] Nakamura S, Senoh M, Iwasa N, Nagahama S, Jpn. J. Appl. Phys. Part 2, 34, L797 (1995)

[2] Nakamura S, Senoh M, Iwasa N, Yamada T, Matushita T, Kiyoku H, Sugi-moto Y, Jpn. J. Appl. Phys. Part 2, 35, L217 (1996)

[3] Asif Khan M, Bhattarai AR, Kuznia JN, Olson DT, Appl. Phys. Lett., 63, 1214 (1993)

[4] Asif Khan M, Kuznia JN, Bhattarai AR, Olson DT, Appl. Phys. Lett., 62, 1786 (1993)

[5] Asif Khan M, Kuznia JN, Olson DT, Van Hove JM, Blasingame M, Reitz LF, Appl. Phys. Lett., 60, 2917 (1993)

[6] Lin ME, Huang FY, Morkoc H, Appl. Phys. Lett., 64, 2557 (1994)

[7] Ren F, Abernathy CR, Rearton SJ, Wisk PW, Appl. Phys. Lett., 64, 1508 (1994)

[8] Durbha A, Rearton SJ, Abernathy CR, Lee JW, Holloway PH, Ren F, J. Vac. Sci. Technol., B14, 2582 (1996)

[9] Ren F, Vartuli CB, Pearton SJ, Abernathy CR, Donovan SM, MacKenzie JD, Shul RJ, Zolper JC, Lovejoy ML, Baca AG, Hagerott-Crawford H, Jones KA, J. Vac. Sci. Technol., A15, 802 (1997)

[10] Vartuli CB, Pearton SJ, Abernathy CR, Mackenzie JD, Shul RJ, Zolper JC, Lovejoy ML, Baca AG, Hagerott-Crawford M, J. Vac. Sci. Technol., B14, 3520 (1996)

[11] Cole MW, Eckart DW, Han WY, Pfeffer RL, Monahan T, Ren F, Yuan C, Stall RA, Pearton SJ, Li Y, Lu Y, J. Appl. Phys., 80, 278 (1996)

[12] Binari SC, Rowland LB, Kruppa W, Kelner G, Doverspike K, Gaskill DK, Electron. Lett., 30, 1248 (1994)

[13] Jang JS, Chang IS, Kim HK, Seong TY, Lee S, Park SJ, Appl. Phys. Lett., 74, 70 (1999)