분자선증착법으로 성장된 AlGaN 에피층의 표면 형상 분석

김제원; 최인훈; 박영균; 김용태; Je Won Kim; In-Hoon Choi; Young K. Park; Yong Tae Kim

Korean Journal of Materials Research, Vol.9, No.9, 878-882, September, 1999

Export Citation

분자선증착법으로 성장된 AlGaN 에피층의 표면 형상 분석

Surface Morphology Study of Al, Ga 1? ,N grown by Plasma Induced Molecular Beam Epitaxy

김제원, 최인훈, 박영균¹, 김용태¹

고려대학교 재료공학과
¹한국과학기술연구원 반도체연구실

Je Won Kim, In-Hoon Choi, Young K. Park¹, and Yong Tae Kim¹

Department of Materials Science, Korea University, Seoul, 136-701, Korea
¹Semicounductor Materials Loboratory, Korea Institute of Science & Technology, P.O.Box 131, Cheongryang, Seoul 130-650, Korea

초록

분자선증착법으로 (0001) 사파이어 기판 위에 Al x Ga 1 ? x N 에피층을 AlN 몰비를 변화시키면서 성장시켰다. AlN 몰비는 0.16에서 0.76까지 변화시켰으며 X선의 회절 실험과 Rutherford backscattering spectroscopy 방법을 이용하여 AlN 몰비를 결정하였다. Al x Ga 1 ? x N 에피층의 깊이 방향의 조성 변화를 관찰하였으며 스퍼터 시간에 대해 각 원소가 일정한 원자 농도를 가짐을 알 수 있었다. AlN 몰비의 증가에 따른 표면 특성의 변화를 관찰하기 위하여 atomic force microscopy 측정을 수행하였다. 표면에서의 입자 모양이 AlN 몰비가 변화함에 따라 원형에서 침상형태로 변화함을 알 수 있었다. 표면 입자에 대한 root mean square 값과 average roughness 값을 구하였으며 AlN 몰비를 바꿈에 따라 나타나는 변화를 관찰하였다.

Structural properties of Al x Ga 1 ? x N epilayers grown on (0001) sapphire substrate by plasma induced molecular beam epitaxy are investigated in the range of AlN molar fraction from 0.16 to 0.76. The AlN molar fraction estimated by X-ray diffraction agrees well with that of Rutherford backscattering spectroscopy, showing a good linear relationship. The uniform Auger electron microscopy depth profile and linear dependence of average atomic concentration of all the constituents of AlGaN epilayers on AlN molar fraction imply that the epitaxial growth of Al x Ga 1 ? x N layers with variation of AlN molar fraction is well controlled without the compositional fluctuation in depth of the epilayer. It is observed by atomic force microscopy that the surface grain shape of Al x Ga 1 ? x N epilayer changes from roundish to coalesced one with increasing AlN molar fraction.

[References]

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Imanaga S, Kawai H, J. Appl. Phys., 82, 5843 (1997)
Xu GY, Salvador A, Kim W, Fan Z, Lu C, Tang H, Morkoc H, Smith G, Estes M, Goldenberg B, Yang W, Krishnankutty S, Appl. Phys. Lett., 71, 2154 (1997)
Osinsky A, Gangopadhyay S, Lim BW, Anwar MZ, Khan MA, Kuksenkov DV, Temkin H, Appl. Phys. Lett., 72, 742 (1998)
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Ohba Y, Yoshida H, Sato R, Jpn. J. Appl. Phys., 36, L1565 (1997)
Polyakov AY, Shin M, Freitas JA, Skowronski M, Greve DW, Wilson RG, J. Appl. Phys., 80, 6349 (1996)
Kim JW, Son CS, Choi IH, Park YK, Kim YT, J. Korean Vac. Soc., 8, 153 (1999)
Kim JW, Son CS, Choi IH, Park YK, Kim YT, Abstracts of the 9th International Symposium on the Physics of Semicondructors and Applications, 95 (1998)
Kim JW, Choi IH, Park YK, Kim YT, J. Kor. Phys. Soc., 34, S378 (1999)
Kim JW, Son CS, Choi IH, Park YK, Kim YT, Ambacher O, Stutzmann M, Abstracts of the 9th International Conference on Electronic Materials, 94 (1998)
Akasaki I, Amano H, Mater. Res. Soc. Symp. Proc., 339, 443 (1994)

[1] Nakamura S, Senoh M, Nagahama SI, Iwasa N, Yamada T, Matsushita T, Kiyoku H, Sugimoto Y, Kozaki T, Umemoto H, Sano M, Chocho K, Jpn. J. Appl. Phys., 36, L1568 (1997)

[2] Khan MA, Bhattarai A, Kuznia JN, Olson DT, Appl. Phys. Lett., 63, 1214 (1993)

[3] Li JZ, Lin JY, Jiang HX, Khan MA, Chen Q, J. Appl. Phys., 82, 1227 (1997)

[4] Bougroz VE, Zubrilov AS, J. Appl. Phys., 81, 2952 (1997)

[5] Khan MA, Kuznia JN, Olson DT, Schaff WJ, Burm JW, Shur MS, Appl. Phys. Lett., 65, 1121 (1994)

[6] Walker D, Zhang X, Kung P, Saxler A, Xu J, Razeghi M, Appl. Phys. Lett., 68, 2100 (1996)

[7] Imanaga S, Kawai H, J. Appl. Phys., 82, 5843 (1997)

[8] Xu GY, Salvador A, Kim W, Fan Z, Lu C, Tang H, Morkoc H, Smith G, Estes M, Goldenberg B, Yang W, Krishnankutty S, Appl. Phys. Lett., 71, 2154 (1997)

[9] Osinsky A, Gangopadhyay S, Lim BW, Anwar MZ, Khan MA, Kuksenkov DV, Temkin H, Appl. Phys. Lett., 72, 742 (1998)

[10] Ponce FA, Major JS, Jr., Plano WE, Welch DF, Appl. Phys. Lett., 65, 2302 (1994)

[11] Ohba Y, Yoshida H, Sato R, Jpn. J. Appl. Phys., 36, L1565 (1997)

[12] Polyakov AY, Shin M, Freitas JA, Skowronski M, Greve DW, Wilson RG, J. Appl. Phys., 80, 6349 (1996)

[13] Kim JW, Son CS, Choi IH, Park YK, Kim YT, J. Korean Vac. Soc., 8, 153 (1999)

[14] Kim JW, Son CS, Choi IH, Park YK, Kim YT, Abstracts of the 9th International Symposium on the Physics of Semicondructors and Applications, 95 (1998)

[15] Kim JW, Choi IH, Park YK, Kim YT, J. Kor. Phys. Soc., 34, S378 (1999)

[16] Kim JW, Son CS, Choi IH, Park YK, Kim YT, Ambacher O, Stutzmann M, Abstracts of the 9th International Conference on Electronic Materials, 94 (1998)

[17] Akasaki I, Amano H, Mater. Res. Soc. Symp. Proc., 339, 443 (1994)