FTES/ O 2   -PECVD 방법에 의한 SiOF 박막형성

김덕수; 이지혁; 이광만; 강동식; 최치규; Duk-Soo Kim; Ji-Hyeog Lee; Kwang Man Lee; Dong Shik Kang; Chi Kyu Choi

Korean Journal of Materials Research, Vol.9, No.8, 825-830, August, 1999

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FTES/ O 2 -PECVD 방법에 의한 SiOF 박막형성

Formation of SiOF Thin Films by FTES/ O 2 -PECVD Method

김덕수, 이지혁, 이광만¹, 강동식², 최치규²

제주대학교 화학과
¹제주대학교 전자공학과
²제주대학교 물리학과

Duk-Soo Kim, Ji-Hyeog Lee, Kwang Man Lee, Dong Shik Kang¹, and Chi Kyu Choi¹

Department of Electronic Engineering, Cheju National University, Cheju 690-756, Korea
¹Department of Physics, Cheju National University, Cheju 690-756, Korea

초록

FTES/ O 2 -PECVD 방법에 의하여 증착된 SiOF 박막의 특성을 FT-IR, SPS, 그리고 ellipsometry로 분석하였다. 유전상수, breakdown field와 누설전류 밀도는 MIS(Au/SiOF/p-Si) 구조로 형성하여 C-V와 I-V특성곡선으로부터 측정하였다. SiOF박막의 step-coverage는 SEM 단면사진으로 조사하였다. FTES와 O 2 의 유량을 각각 300sccm으로 반응로에 주입하였을 때 양질의 SiOF 박막이 형성되었다. 형성된 박막의 유전상수는 3.1로서 다른 산화막보다 더 낮은 값으로 나타났다. breakdown field와 누설전류밀도는 약 10MV/cm와 8×10 9 A/cm 2 로 측정되었다. 0.3{\mu}{\textrm}{m} 금속 패턴에 2500\AA 의 두께로 증착된 SiOF 박막은 전극간에 void가 없이 우수한 덮힘을 보였다.

Characteristics of SiOF films deposited by a FTES/ O 2 -plasma enhanced chemical vapor deposition method have been investigated using Fourier transform infrared spectroscopy, X-ray photoelectro spectroscopy, and ellipsometry. Electrical properties such as dielectric constant, dielectric breakdown and leakage current density are investigated using C-V and I-V measurements with MIS(Au/SiOF/p-Si) capacitor structure. Stepcoverage of the films have been also characterized using scanning electron microscopy and ellipsometry. A high quality SiOF film was formed on that the flow rates of FTES and O 2 were 300sccm, respectively. The dielectric constant of the deposited SiOF film was about 3.1. This value is lower than that of the oxide films obtained using other method. The dielectric breakdown field and leakage current are more than 10MV/cm and about 8[\times}10^{9}A/\textrm{cm}^2 , respectively. The deposited SiOF film with thickness as 2500\AA on the 0.3{\mu}{\textrm}{m} metal pattern shows a high step-coverage without a void.

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