P형 Bi 0.5 Sb 1.5 Te 3 박막의 열전 특성에 미치는 두께 및 어닐링 효과 원문

김일호; 장경욱; Il-Ho Kim; Kyung-Wook Jang

Korean Journal of Materials Research, Vol.14, No.1, 41-45, January, 2004

DOI10.3740/MRSK.2004.14.1.041 Export Citation

P형 Bi 0.5 Sb 1.5 Te 3 박막의 열전 특성에 미치는 두께 및 어닐링 효과 원문

Thickness and Annealing Effects on the Thermoelectric Properties of P-type Bi 0.5 Sb 1.5 Te 3 Thin Films

김일호 ^†, 장경욱¹

충주대학교 신소재공학과/나노기술연구소
¹한서대학교 신소재공학과

Il-Ho Kim^†, and Kyung-Wook Jang¹

Dept. of Materials Science and Engineering/Nano Technology Lab., Chungju National University, Korea
¹Dept. of Materials Science and Engineering, Hanseo University, Korea

E-mail:

P-type Bi 0.5 Sb 1.5 Te 3 thin films were deposited by the flash evaporation technique, and their thermoelectric properties and electronic transport parameters were investigated. The effective mean free path model was adopted to examine the thickness effect on the thermoelectric properties. Annealing effects on the carrier concentration and mobility were also studied, and their variations were analyzed in conjunction with the antisite defects. Seebeck coefficient and electrical resistivity versus inverse thickness showed a linear relationship, and the effective mean free path was found to be 3150 \AA . No phase transformation and composition change were observed after annealing treatment, but carrier mobility increased due to grain growth. Carrier concentration decreased considerably due to reduction of the antisite defects, so that electrical conductivity decreased and Seebeck coefficient increased. When annealed at 473 K for 1 hr, Seebeck coefficient and electrical conductivity were 160μ V/K and 610 W ?1 cm ?1 , respectively. Therefore, the thermoelectric quality factor were also enhanced to be 16μ W/cm K 2 .>.

Keywords:Thermoelectric;Thin film;(Bi,Sb) 2 Te 3

[References]

Kim IH, Lee DH, Proc. 12th ICT 328 (1993) (1993)
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Boikov YA, Gribanova OS, Danilov VA, Deryagina IM, Proc. 8th ICTEC, 18 (1989) (1989)
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Stary Z, Horak J, Stordeur M, Stolzer M, J. Phys. Chem. Solids, 48, 29 (1987)
Das VD, Soundarajan N, J. Appl. Phys., 65, 2332 (1989)
Das VD, Soundarajan N, Phys. Rev. B, 37, 4552 (1988)
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Amin FAA, Al-Ghaffari ASS, Issa MAA, Hassib AM, J. Mater. Sci., 27, 1250 (1992)

[Related Articles]

[1] Kim IH, Lee DH, Proc. 12th ICT 328 (1993) (1993)

[2] Patel NG, Patel PG, Solid-State Electron., 35, 1269 (1992)

[3] George J, Pradeep B, Solid State Commun., 56, 117 (1985)

[4] Boikov YA, Gribanova OS, Danilov VA, Deryagina IM, Proc. 8th ICTEC, 18 (1989) (1989)

[5] Volklein F, Baier V, Diller V, Kessler E, Thin Solid Films, 187, 253 (1990)

[6] Eckertova L, Physics of Thin Film(Plenum Press, New York, 1986) p. 17 (1986)

[7] Stary Z, Horak J, Stordeur M, Stolzer M, J. Phys. Chem. Solids, 48, 29 (1987)

[8] Das VD, Soundarajan N, J. Appl. Phys., 65, 2332 (1989)

[9] Das VD, Soundarajan N, Phys. Rev. B, 37, 4552 (1988)

[10] Przyluski J, Borkowski K, Proc. 6th ICTEC, 100 (1986) (1986)

[11] Amin FAA, Al-Ghaffari ASS, Issa MAA, Hassib AM, J. Mater. Sci., 27, 1250 (1992)