Eu2+/Dy3+ 이온이 도핑된 Sr2MgSi2O7 분말 합성 및 발광 특성

박재한; 김영진; Jaehan Park; Young Jin Kim

Korean Journal of Materials Research, Vol.24, No.12, 658-662, December, 2014

DOI10.3740/MRSK.2014.24.12.658 Export Citation

Eu2+/Dy3+ 이온이 도핑된 Sr2MgSi2O7 분말 합성 및 발광 특성

Synthesis and Luminescent Characterization of Eu2+/Dy3+-Doped Sr2MgSi2O7 Powders

박재한, 김영진 ^†

경기대학교 공과대학 신소재공학과

Jaehan Park, and Young Jin Kim^†

Department of Materials Science and Engineering, Kyonggi University, Korea

E-mail:

Eu2+/Dy3+-doped Sr2MgSi2O7 powders were synthesized using a solid-state reaction method with flux (NH4Cl). The broad photoluminescence (PL) excitation spectra of Sr2MgSi2O7:Eu2+ were assigned to the 4f7-4f65d transition of the Eu2+ ions, showing strong intensities in the range of 375 to 425 nm. A single emission band was observed at 470 nm, which was the result of two overlapping subbands at 468 and 507 nm owing to Eu(I) and Eu(II) sites. The strongest emission intensity of Sr2MgSi2O7:Eu2+ was obtained at the Eu concentration of 3 mol%. This concentration quenching mechanism was attributable to dipole-dipole interaction. The Ba2+ substitution for Sr2+ caused a blue-shift of the emission band; this behavior was discussed by considering the differences in ionic size and covalence between Ba2+ and Sr2+. The effects of the Eu/Dy ratios on the phosphorescence of Sr2MgSi2O7:Eu2+/Dy3+ were investigated by measuring the decay time; the longest afterglow was obtained for 0.01Eu2+/0.03Dy3+.

Keywords:Sr2MgSi2O7;luminescence;phosphor;phosphorescence

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Zhang XG, Tang XP, Zhang JL, Wang HH, Shi JX, Gong ML, Powder Technol., 204(2-3), 263 (2010)
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Kim T, Kim Y, Kang S, Appl. Phys. B-Lasers Opt., 106, 1009 (2012)
Kimata M, Z. Kristall., 163, 295 (1983)
Blasse G, J. Solid State Chem., 207, 62 (1986)
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Park J, Lee SJ, Kim YJ, Cryst. Growth Des., 13, 5204 (2013)
Perkowitz S, Optical characterization of semiconductors: infrared, raman, and photoluminescence spectroscopy, Academic Press, San Diego (1993).
Blasse G, Wanmaker WL, ter Vrugt JW, Bril A, Philips Res. Rep., 23, 189 (1968)

[Related Articles]

[1] Lin CC, Liu RS, J. Phys. Chem. Lett., 2, 1268 (2011)

[2] McKittrick J, Hannah ME, Piquette A, Han JK, Choi JI, Anc M, Galvez M, Lugauer H, Talbot JB, Mishra KC, ECS J. Solid State Sci. Technol., 2(2), R3119 (2013)

[3] Hannah ME, Piquette AP, Anc M, McKittrick J, Talbot J, Han J, Mishra KC, ECS Trans., 41(37), 19 (2012)

[4] Park YJ, Lee SH, Jang WK, Yoon CB, Yoon CS, J. Korea Ceram. Soc., 47(6), 503 (2010)

[5] Lee EY, Nazarov M, Kim YJ, J. Electrochem. Soc., 157(3), J102 (2010)

[6] Park J, Kim YJ, J. Korea Ceram. Soc., 51(1), 37 (2014)

[7] Yonesaki Y, Takei T, Kumada N, Kinomura N, J. Solid State Chem., 182, 547 (2009)

[8] Park JK, Choi KJ, Kim CH, Park HD, Kim HK, Electrochem. Solid State Lett., 7(10), H42 (2004)

[9] Park J, Kim YJ, J. Ceram. Process. Res., 15(3), 189 (2014)

[10] Zhang XG, Tang XP, Zhang JL, Wang HH, Shi JX, Gong ML, Powder Technol., 204(2-3), 263 (2010)

[11] Lin Y, Tang Z, Zhang Z, Wang X, Zhang J, J. Mater. Sci., 20, 1505 (2001)

[12] Pan W, Ning G, Zhang X, Wang J, Lin Y, Ye J, J. Lumin., 128, 1975 (2008)

[13] Kwon KH, Im WB, Jeon DY, J. Nanosci. Nanotechnol., 13(6), 4079 (2013)

[14] Liu B, Shi C, Yin M, Dong L, Xiao Z, J. Alloy. Compd., 387, 65 (2005)

[15] Lin YH, Nan CW, Zhou XS, Wu JB, Wang HF, Chen DP, Xu SM, Mater. Chem. Phys., 82(3), 860 (2003)

[16] Kim T, Kim Y, Kang S, Appl. Phys. B-Lasers Opt., 106, 1009 (2012)

[17] Kimata M, Z. Kristall., 163, 295 (1983)

[18] Blasse G, J. Solid State Chem., 207, 62 (1986)

[19] Dexter DL, J. Chem. Phys., 21, 836 (1953)

[20] Park J, Lee SJ, Kim YJ, Cryst. Growth Des., 13, 5204 (2013)

[21] Perkowitz S, Optical characterization of semiconductors: infrared, raman, and photoluminescence spectroscopy, Academic Press, San Diego (1993).

[22] Blasse G, Wanmaker WL, ter Vrugt JW, Bril A, Philips Res. Rep., 23, 189 (1968)