결정질 실리콘 태양전지 적용을 위한 ALD-Al2O3 패시베이션 막의 산화질화막 적층 특성

조국현; 조영준; 장효식; Kuk-Hyun Cho; Young Joon Cho; Hyo Sik Chang

Korean Journal of Materials Research, Vol.25, No.5, 233-237, May, 2015

DOI10.3740/MRSK.2015.25.5.233 Export Citation

결정질 실리콘 태양전지 적용을 위한 ALD-Al2O3 패시베이션 막의 산화질화막 적층 특성

Characteristics on Silicon Oxynitride Stack Layer of ALD-Al2O2 Passivation Layer for c-Si Solar Cell

조국현, 조영준, 장효식^†

충남대학교 에너지과학기술대학원

Kuk-Hyun Cho, Young Joon Cho, and Hyo Sik Chang^†

Graduate school of Energy Science and Technology, Chungnam National University, Daejeon 305-764, Korea

E-mail:

Silicon oxynitride that can be deposited two times faster than general SiNx:H layer was applied to fabricate the passivation protection layer of atomic layer deposition (ALD) Al2O3. The protection layer is deposited by plasma-enhanced chemical vapor deposition to protect Al2O3 passivation layer from a high temperature metallization process for contact firing in screen-printed silicon solar cell. In this study, we studied passivation performance of ALD Al2O3 film as functions of process temperature and RF plasma effect in plasma-enhanced chemical vapor deposition system. Al2O3/SiON stacks coated at 400 oC showed higher lifetime values in the as-stacked state. In contrast, a high quality Al2O3/SiON stack was obtained with a plasma power of 400 W and a capping-deposition temperature of 200 oC after the firing process. The best lifetime was achieved with stack films fired at 850 oC. These results demonstrated the potential of the Al2O3/SiON passivated layer for crystalline silicon solar cells.

Keywords:passivation;atomic layer deposition;aluminum oxide(Al2O3);oxynitride;c-Si solar cell

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[1] Roh SC, Seo HI, J. Semicond. Display Technol., 10(1) (2011)

[2] Liao B, Stangl R, Ma F, Mueller T, Lin F, Aberle AG, Bhatia CS, Hoex B, J. Phys. D-Appl. Phys., 46, 385102 (2013)

[3] Hoex B, Heil SBS, Langereis E, van de Sanden MCM, Kessels WMM, Appl. Phys. Lett., 89, 042112 (2006)

[4] Naumann V, Otto M, Wehrspohn RB, Werner M, Hagendorf C, Silicon PV: April 03-05, 2012, Leuven, Belgium.

[5] Zhao Y, Zhou C, Zhang X, Zhang P, Dou Y, Wang W, Cao X, Wang B, Tang Y, Zhou S, Nanoscale Res. Lett., 8, 114 (2013)

[6] Bordihn S, Engelhart P, Mertens V, Kesser G, Kohn D, Dingemans G, Mandoc MM, Muller JW, Kessels WMM, Silicon PV: 17-20 April 2011, Freiburg, Germany.

[7] Lee SH, J. Korean Phys. Soc., 39(2), 369 (2001)

[8] Gatz S, Muller J, Dullweber T, Brendel R, Silicon PV: April 03-05, 2012, Leuven, Belgium.

[9] Kafle B, Kuehnhold S, Beyer W, Lindekugel S, Saint-Cast P, Hofmann M, Rentsch J, 27th EU PVSEC P.1788-1792.

[10] Jakschik S, Schroeder U, Hecht T, Gutsche M, Seidl H, Bartha JW, Thin Solid Films, 425(1-2), 216 (2003)

[11] Kuhnhold S, Saint-Cast P, Kafle B, Hofmann M, Colonna F, Zacharias M, J. Appl. Phys., 116, 054507 (2014)

[12] Kuhnhold S, Kafle B, Kroely L, Saint-Cast P, Hofmann M, Rentsch J, Preu R, Energy Procedia, 27, 273 (2012)

[13] Chowdhuri AR, Takoudis CG, Klie RF, Browning ND, Appl. Phys. Lett., 80, 4241 (2002)

[14] Dingemans G, Beyer W, van de Sanden MCM, Kessels WMM, Appl. Phys. Lett., 97, 152106 (2010)