ZnO, SnO2, ZTO 산화물반도체의 전기적인 특성 분석

오데레사; Teresa Oh

Korean Journal of Materials Research, Vol.25, No.7, 347-351, July, 2015

DOI10.3740/MRSK.2015.25.7.347 Export Citation

ZnO, SnO2, ZTO 산화물반도체의 전기적인 특성 분석

Analysis of Electrical Characteristics of Oxide Semiconductor of ZnO, SnO2 and ZTO

오데레사^†

청주대학교 반도체공학과

Teresa Oh^†

Department of Semiconductor Engineering, Cheongju University, Cheongju, Korea

E-mail:

To study the characteristics of ZTO, which is made using a target mixed ZnO:SnO2= 1:1, the ZnO and SnO2 were analyzed using PL, XRD patterns, and electrical properties. Resulting characteristics were compared with the electrical characteristics of ZnO, SnO2, and ZTO. The electrical characteristics of ZTO were found to improve with increasing of the annealing temperature due to the high degree of crystal structures at high temperature. The crystal structure of SnO2 was also found to increase with increasing temperatures. So, the structure of ZTO was found to be affected by the annealing temperature and the molecules of SnO2; the optical property of ZTO was similar to that of ZnO. Among the ZTO films, ZTO annealed at the highest temperature showed the highest capacitance and Schottky contact.

Keywords:ZnO;SnO2;ZTO;XRD;PL spectra;capacitance

[References]

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Akasaka S, Tamura K, Nakahara K, Tanabe T, Kamisawa A, Kawasaki M, Appl. Phys. Lett., 93, 123309 (2008)
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Nomura K, Kamiya T, Hosono H, Adv. Mater., 23(30), 3431 (2011)
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Cha D, Lee S, Jung J, An I, J. Korean Phys. Soc., 56(3), 846 (2010)
Maserjian J, J. Vac. Sci. Technol. A, 11, 996 (1974)
Nomura K, Kamiya T, Ohta H, Hirano M, Hosono H, Appl. Phys. Lett., 93, 192107 (2008)
Mitrofanov O, Mantra M, J. Appl. Phys., 95, 6414 (2004)
Lopes ME, Gomes HL, Medeiros MCR, Barquinha P, Pereira L, Fortunato E, Martins R, Ferreira I, Appl. Phys. Lett., 95, 063502 (2009)
Oh T, Choi CK, J. Korean Phys. Soc., 56, 1150 (2010)
Peng YY, Hsieh TE, Hsu CH, Nanotechnology, 17, 174 (2006)
Maserjian J, Zamani N, Appl. Phys. Lett., 53, 559 (1982)
Heo J, Kim HJ, Han J, Shon JW, Thin Solid Films, 515(12), 5035 (2007)
Simmons JG, Phys. Rev., 155, 657 (1967)

[Referenced By]

[1] Venugopal G, Kim SJ, Curr. Appl. Phys., 11(3), S381 (2011)

[2] Akasaka S, Tamura K, Nakahara K, Tanabe T, Kamisawa A, Kawasaki M, Appl. Phys. Lett., 93, 123309 (2008)

[3] Chen WT, Lo SY, Kao SC, Zan HW, Tsai CC, Lin JH, Fang CH, Lee CC, IEEE Electron. Dev. Lett., 32, 1552 (2011)

[4] Tsao SW, Chang TC, Huang SY, Chen MC, Chen SC, Tsai CT, Kuo YJ, Chen YC, Wu WC, Solid-State Electron., 54(12), 1497 (2010)

[5] Jeong DW, Kim JJ, Lee JO, J. Korean Phys. Soc., 59(5), 3133 (2011)

[6] Nomura K, Kamiya T, Hosono H, Adv. Mater., 23(30), 3431 (2011)

[7] Lee JS, Kwack YJ, Choi WS, J. Korean Phys. Soc., 59(5), 3305 (2011)

[8] Cha D, Lee S, Jung J, An I, J. Korean Phys. Soc., 56(3), 846 (2010)

[9] Maserjian J, J. Vac. Sci. Technol. A, 11, 996 (1974)

[10] Nomura K, Kamiya T, Ohta H, Hirano M, Hosono H, Appl. Phys. Lett., 93, 192107 (2008)

[11] Mitrofanov O, Mantra M, J. Appl. Phys., 95, 6414 (2004)

[12] Lopes ME, Gomes HL, Medeiros MCR, Barquinha P, Pereira L, Fortunato E, Martins R, Ferreira I, Appl. Phys. Lett., 95, 063502 (2009)

[13] Oh T, Choi CK, J. Korean Phys. Soc., 56, 1150 (2010)

[14] Peng YY, Hsieh TE, Hsu CH, Nanotechnology, 17, 174 (2006)

[15] Maserjian J, Zamani N, Appl. Phys. Lett., 53, 559 (1982)

[16] Heo J, Kim HJ, Han J, Shon JW, Thin Solid Films, 515(12), 5035 (2007)

[17] Simmons JG, Phys. Rev., 155, 657 (1967)