SiOC 절연박막 특성에 의존하는 ITO 투명박막의 전기적인 특성과 오믹접합의 효과

오데레사; Teresa Oh

Korean Journal of Materials Research, Vol.25, No.7, 352-357, July, 2015

DOI10.3740/MRSK.2015.25.7.352 Export Citation

SiOC 절연박막 특성에 의존하는 ITO 투명박막의 전기적인 특성과 오믹접합의 효과

Ohmic Contact Effect and Electrical Characteristics of ITO Thin Film Depending on SiOC Insulator

오데레사^†

청주대학교 반도체공학과

Teresa Oh^†

Department of Semiconductor Engineering, Cheongju University, Korea

E-mail:

To research the characteristics of ITO film depending on a polarity of SiOC, specimens of ITO/SiOC/glass with metal-insulator-substrates (MIS) were prepared using a sputtering system. SiOC film with 17 sccm of oxygen flow rate became a non-polarity with low surface energy. The PL spectra of the ITO films deposited with various argon flow rates on SiOC film as non-polarity were found to lead to similar formations. However, the PL spectra of ITO deposited with various argon flow rates on SiOC with polarity were seen to have various features owing to the chemical reaction between ITO and the polar sites of SiOC. Most ITO/SiOC films non-linearly showed the Schottky contacts and current increased. But the ITO/SiOC film with a low current demonstrated an Ohmic contact.

Keywords:SiOC;ITO;schottky contact;ohmic contact;PL spectra

[References]

Venugopal G, Kim SJ, Curr. Appl. Phys., 11(3), S381 (2011)
Akasaka S, Tamura K, Nakahara K, Tanabe T, Kamisawa A, Kawasaki M, Appl. Phys. Lett., 93, 123309 (2008)
Chen WT, Lo SY, Kao SC, Zan HW, Tsai CC, Lin JH, Fang CH, Lee CC, IEEE Electron. Dev. Lett., 32, 1552 (2011)
Tsao SW, Chang TC, Huang SY, Chen MC, Chen SC, Tsai CT, Kuo YJ, Chen YC, Wu WC, Solid-State Electron., 54(12), 1497 (2010)
Maserjian J, J. Vac. Sci. Technol. A, 11, 996 (1974)
Kot D, Mchedlidze T, Kissinger G, von Ammonc W, ECS J. Sci. Technol., 2(1), P9 (2013)
Park JS, Maeng WJ, Kim HS, Park JS, Thin Solid Films, 520(6), 1679 (2012)
Nomura K, Kamiya T, Ohta H, Hirano M, Hosono H, Appl. Phys. Lett., 93, 192107 (2008)
Mitrofanov O, Mantra M, J. Appl. Phys., 95, 6414 (2004)
Lopes ME, Gomes HL, Medeiros MCR, Barquinha P, Pereira L, Fortunato E, Martins R, Ferreira I, Appl. Phys. Lett., 95, 063502 (2009)
Maserjian J, Zamani N, Appl. Phys. Lett., 53, 559 (1982)
Simmons JG, Phys. Rev., 155, 657 (1967)
Oh T, IEEE Trans. Nanotechnol., 5, 23 (2006)
Frenkel J, Phys. Rev., 54, 647 (1938)
Oh T, Choi CK, J. Korean Phys. Soc., 56, 1150 (2010)

[1] Venugopal G, Kim SJ, Curr. Appl. Phys., 11(3), S381 (2011)

[2] Akasaka S, Tamura K, Nakahara K, Tanabe T, Kamisawa A, Kawasaki M, Appl. Phys. Lett., 93, 123309 (2008)

[3] Chen WT, Lo SY, Kao SC, Zan HW, Tsai CC, Lin JH, Fang CH, Lee CC, IEEE Electron. Dev. Lett., 32, 1552 (2011)

[4] Tsao SW, Chang TC, Huang SY, Chen MC, Chen SC, Tsai CT, Kuo YJ, Chen YC, Wu WC, Solid-State Electron., 54(12), 1497 (2010)

[5] Maserjian J, J. Vac. Sci. Technol. A, 11, 996 (1974)

[6] Kot D, Mchedlidze T, Kissinger G, von Ammonc W, ECS J. Sci. Technol., 2(1), P9 (2013)

[7] Park JS, Maeng WJ, Kim HS, Park JS, Thin Solid Films, 520(6), 1679 (2012)

[8] Nomura K, Kamiya T, Ohta H, Hirano M, Hosono H, Appl. Phys. Lett., 93, 192107 (2008)

[9] Mitrofanov O, Mantra M, J. Appl. Phys., 95, 6414 (2004)

[10] Lopes ME, Gomes HL, Medeiros MCR, Barquinha P, Pereira L, Fortunato E, Martins R, Ferreira I, Appl. Phys. Lett., 95, 063502 (2009)

[11] Maserjian J, Zamani N, Appl. Phys. Lett., 53, 559 (1982)

[12] Simmons JG, Phys. Rev., 155, 657 (1967)

[13] Oh T, IEEE Trans. Nanotechnol., 5, 23 (2006)

[14] Frenkel J, Phys. Rev., 54, 647 (1938)

[15] Oh T, Choi CK, J. Korean Phys. Soc., 56, 1150 (2010)