Electric pulse-induced resistance (EPIR) effect in metal-oxide-metal devices is a fascinating phenomenon toward next generation universal nonvolatile memories. Herein, the cuprous sulfide (Cu2S) film was prepared by electrochemical deposition. Further, the resistive switching (RS) behaviors of Ag/Cu2S/Ag and Ag/Cu2S/Cu sandwich structures were observed and compared. Ag/Cu2S/Ag device shows a reversible, high ratio (>= 10(3)) RS effect. However, Ag/Cu2S/Cu device displays a low operation voltage (<= 0.5 V) and a more consistent high resistance. Our data suggest that the RS effect in Ag/Cu2S/Ag device results from formation or annihilation of conductive filaments. Moreover, a space charge barrier at the interface of Ag/Cu2S film is used to explain the RS effect in Ag/Cu2S/Cu device. This study is useful for exploring the sulfide materials and their applications in nonvolatile memory devices. (C) 2015 Elsevier B.V. All rights reserved.