The interdiffusion upon annealing Cu/Ni multilayers structures at 325 degrees C, 350 degrees C and 375 degrees C for 30 min were investigated by Auger electron spectroscopy (AES) depth profiling. The Cu/Ni multilayers structures were deposited on a SiO2 substrate by means of electron beam evaporation in a high vacuum. The measured AES depth profiles of the as-deposited and annealed samples were quantitatively fitted by the Mixing-Roughness-Information depth model assuming that the roughness parameter has linearly increased with the sputtered depth. The roughness values extracted from the depth profiling data fits agreed well with those measured by atomic force microscopy. The depth-dependent interdiffusion coefficients of the annealed samples and depth resolution upon depth profiling of the as-deposited sample were quantitatively evaluated accordingly. (C) 2015 Elsevier B.V. All rights reserved.