In this paper, the electrical properties of the SiO2/SiC interface on silicon carbide (4H-SiC) epilayers grown on 2 degrees-off axis substrates were studied. After epilayer growth, chemical mechanical polishing (CMP) allowed to obtain an atomically flat surface with a roughness of 0.14 nm. Metal-oxide-semiconductor (MOS) capacitors, fabricated on this surface, showed an interface state density of similar to 1 x 10(12) eV(-1) cm(-2) below the conduction band, a value which is comparable to the standard 4 degrees-off-axis material commonly used for 4H-SiC MOS-based device fabrication. Moreover, the Fowler-Nordheim and time-zero-dielectric breakdown analyses confirmed an almost ideal behavior of the interface. The results demonstrate the maturity of the 2 degrees-off axis material for 4H-SiC MOSFET device fabrication. (C) 2015 Elsevier B.V. All rights reserved.